TY - JOUR
T1 - Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films
AU - Kim, Y. H.
AU - Jeong, J.
AU - Lee, K. S.
AU - Cheong, B.
AU - Seong, T. Y.
AU - Kim, W. M.
N1 - Funding Information:
This work was supported by the KIST internal project under contract 2E20980, and partially by the Converging Research Center Program through the National Research Foundation of Korea (NRF) grant ( 2009-0082023 ) funded by the Ministry of Education, Science and Technology and by the Korea Science and Engineering Foundation (KOSEF) grant ( 2009-0064868 ).
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2010/10/15
Y1 - 2010/10/15
N2 - ZnO films doped with Ga (GZO) of varying composition were prepared on Corning glass substrate by radio frequency magnetron sputtering at various deposition temperatures of room temperature, 150, 250 and 400 °C, and their temperature dependent photoelectric and structural properties were correlated with Ga composition. With increasing deposition temperature, the Ga content, at which the lowest electrical resistivity and the best crystallinity were observed, decreased. Films with optimal electrical resistivity of 2-3 × 10 -4 Ω cm and with good crystallinity were obtained in the substrate temperature range from 150 to 250 °C, and the corresponding C Ga /(C Ga + C Zn ) atomic ratio was about 0.049. GZO films grown at room temperature had coarse columnar structure and low optical transmittance, while films deposited at 400 °C yielded the highest figure of merit (FOM) due to very low optical absorption despite rather moderate electrical resistivity slightly higher than 4 × 10 -4 Ω cm. The optimum Ga content at which the maximum figure of merit was obtained decreased with increasing deposition temperature.
AB - ZnO films doped with Ga (GZO) of varying composition were prepared on Corning glass substrate by radio frequency magnetron sputtering at various deposition temperatures of room temperature, 150, 250 and 400 °C, and their temperature dependent photoelectric and structural properties were correlated with Ga composition. With increasing deposition temperature, the Ga content, at which the lowest electrical resistivity and the best crystallinity were observed, decreased. Films with optimal electrical resistivity of 2-3 × 10 -4 Ω cm and with good crystallinity were obtained in the substrate temperature range from 150 to 250 °C, and the corresponding C Ga /(C Ga + C Zn ) atomic ratio was about 0.049. GZO films grown at room temperature had coarse columnar structure and low optical transmittance, while films deposited at 400 °C yielded the highest figure of merit (FOM) due to very low optical absorption despite rather moderate electrical resistivity slightly higher than 4 × 10 -4 Ω cm. The optimum Ga content at which the maximum figure of merit was obtained decreased with increasing deposition temperature.
KW - Deposition temperature
KW - Ga doped ZnO
KW - Transparent conducting oxide
KW - rf magnetron sputtering
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U2 - 10.1016/j.apsusc.2010.06.045
DO - 10.1016/j.apsusc.2010.06.045
M3 - Article
AN - SCOPUS:77955515827
VL - 257
SP - 109
EP - 115
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1
ER -