Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films

Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, W. M. Kim

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

ZnO films doped with Ga (GZO) of varying composition were prepared on Corning glass substrate by radio frequency magnetron sputtering at various deposition temperatures of room temperature, 150, 250 and 400 °C, and their temperature dependent photoelectric and structural properties were correlated with Ga composition. With increasing deposition temperature, the Ga content, at which the lowest electrical resistivity and the best crystallinity were observed, decreased. Films with optimal electrical resistivity of 2-3 × 10 -4 Ω cm and with good crystallinity were obtained in the substrate temperature range from 150 to 250 °C, and the corresponding C Ga /(C Ga + C Zn ) atomic ratio was about 0.049. GZO films grown at room temperature had coarse columnar structure and low optical transmittance, while films deposited at 400 °C yielded the highest figure of merit (FOM) due to very low optical absorption despite rather moderate electrical resistivity slightly higher than 4 × 10 -4 Ω cm. The optimum Ga content at which the maximum figure of merit was obtained decreased with increasing deposition temperature.

Original languageEnglish
Pages (from-to)109-115
Number of pages7
JournalApplied Surface Science
Volume257
Issue number1
DOIs
Publication statusPublished - 2010 Oct 15

Keywords

  • Deposition temperature
  • Ga doped ZnO
  • Transparent conducting oxide
  • rf magnetron sputtering

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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