Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

S. Nigam, Ji Hyun Kim, B. Luo, F. Ren, G. Y. Chung, S. J. Pearton, J. R. Williams, K. Shenai, P. Neudeck

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

SiC rectifiers with an on/off current ratio of 4 × 105 (at 1.5 V/-500 V) were fabricated using junction termination extension (JTE) and dielectric overlap. The reverse breakdown voltage was inversely dependent on contact area and was not a strong function of JTE length up to 40 μm. Similarly, for a given JTE length, the metal overlap did not have a strong influence on breakdown voltage. Oval- and circular-shaped contacts produced larger breakdown voltages than square rectifying contacts. The on-state resistance, RON, was 4.2 mΩ cm2, which is close to the theoretical minimum of these rectifiers using Ni Schottky contacts. The figure-of-merit (VB)2/RON was as high as 156 MW cm-2.

Original languageEnglish
Pages (from-to)57-60
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes

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rectifiers
Electric breakdown
electrical faults
Geometry
geometry
figure of merit
electric contacts
Metals
metals
rice bran saccharide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effect of contact geometry on 4H-SiC rectifiers with junction termination extension. / Nigam, S.; Kim, Ji Hyun; Luo, B.; Ren, F.; Chung, G. Y.; Pearton, S. J.; Williams, J. R.; Shenai, K.; Neudeck, P.

In: Solid-State Electronics, Vol. 47, No. 1, 01.01.2003, p. 57-60.

Research output: Contribution to journalArticle

Nigam, S, Kim, JH, Luo, B, Ren, F, Chung, GY, Pearton, SJ, Williams, JR, Shenai, K & Neudeck, P 2003, 'Effect of contact geometry on 4H-SiC rectifiers with junction termination extension', Solid-State Electronics, vol. 47, no. 1, pp. 57-60. https://doi.org/10.1016/S0038-1101(02)00273-3
Nigam, S. ; Kim, Ji Hyun ; Luo, B. ; Ren, F. ; Chung, G. Y. ; Pearton, S. J. ; Williams, J. R. ; Shenai, K. ; Neudeck, P. / Effect of contact geometry on 4H-SiC rectifiers with junction termination extension. In: Solid-State Electronics. 2003 ; Vol. 47, No. 1. pp. 57-60.
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AU - Pearton, S. J.

AU - Williams, J. R.

AU - Shenai, K.

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