SiC rectifiers with an on/off current ratio of 4 × 105 (at 1.5 V/-500 V) were fabricated using junction termination extension (JTE) and dielectric overlap. The reverse breakdown voltage was inversely dependent on contact area and was not a strong function of JTE length up to 40 μm. Similarly, for a given JTE length, the metal overlap did not have a strong influence on breakdown voltage. Oval- and circular-shaped contacts produced larger breakdown voltages than square rectifying contacts. The on-state resistance, RON, was 4.2 mΩ cm2, which is close to the theoretical minimum of these rectifiers using Ni Schottky contacts. The figure-of-merit (VB)2/RON was as high as 156 MW cm-2.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry