Effect of controlled Mn doping on transition of oxygen vacancies in Bi2Ti2O7 thin films: An electrochemical study

Leeseung Kang, Hye Lan An, Tae Hyung Kim, Duk Hee Lee, Kyung Soo Park, Basudev Swain, Chan Gi Lee, Sahn Nahm

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Crystalline pyrochlore Bi2Ti2O7 (B2T2) thin films were well formed at 300C under 740mTorr of oxygen partial pressure using pulsed laser deposition. In order to improve the electrical properties of the dielectric B2T2 films, Mn ions were doped into the films and their influence was investigated. Improvement in electrical behavior, especially leakage current density were revealed via impedance spectroscopy and electrochemical studies. Mn doping at an appropriate level improved the electrical properties of the films by affording extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies acting as electron trap sites at the interface between the Pt electrode and the B2T2 film. Schottky emission was posited as the leakage current mechanism in the 10 mol% Mn doped B2T2 (Mn:B2T2) films. The barrier height between the Pt electrode and the Mn:B2T2 film was approximately 1.46eV, but decreased to 0.51eV for the non-doped film due to large numbers of intrinsic oxygen vacancies.

Original languageEnglish
JournalApplied Surface Science
DOIs
Publication statusAccepted/In press - 2016 Aug 21

Fingerprint

Oxygen vacancies
Doping (additives)
Thin films
Leakage currents
Electric properties
Electron traps
Electrodes
Dielectric films
Pulsed laser deposition
Partial pressure
Current density
Spectroscopy
Ions
Oxygen
Crystalline materials

Keywords

  • BiTiO
  • Leakage current mechanism
  • Metal-insulator-metal capacitor
  • Pyrochlore

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Effect of controlled Mn doping on transition of oxygen vacancies in Bi2Ti2O7 thin films : An electrochemical study. / Kang, Leeseung; An, Hye Lan; Kim, Tae Hyung; Lee, Duk Hee; Park, Kyung Soo; Swain, Basudev; Lee, Chan Gi; Nahm, Sahn.

In: Applied Surface Science, 21.08.2016.

Research output: Contribution to journalArticle

Kang, Leeseung ; An, Hye Lan ; Kim, Tae Hyung ; Lee, Duk Hee ; Park, Kyung Soo ; Swain, Basudev ; Lee, Chan Gi ; Nahm, Sahn. / Effect of controlled Mn doping on transition of oxygen vacancies in Bi2Ti2O7 thin films : An electrochemical study. In: Applied Surface Science. 2016.
@article{3892942c3f2f45d9945c67b9d8916723,
title = "Effect of controlled Mn doping on transition of oxygen vacancies in Bi2Ti2O7 thin films: An electrochemical study",
abstract = "Crystalline pyrochlore Bi2Ti2O7 (B2T2) thin films were well formed at 300C under 740mTorr of oxygen partial pressure using pulsed laser deposition. In order to improve the electrical properties of the dielectric B2T2 films, Mn ions were doped into the films and their influence was investigated. Improvement in electrical behavior, especially leakage current density were revealed via impedance spectroscopy and electrochemical studies. Mn doping at an appropriate level improved the electrical properties of the films by affording extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies acting as electron trap sites at the interface between the Pt electrode and the B2T2 film. Schottky emission was posited as the leakage current mechanism in the 10 mol{\%} Mn doped B2T2 (Mn:B2T2) films. The barrier height between the Pt electrode and the Mn:B2T2 film was approximately 1.46eV, but decreased to 0.51eV for the non-doped film due to large numbers of intrinsic oxygen vacancies.",
keywords = "BiTiO, Leakage current mechanism, Metal-insulator-metal capacitor, Pyrochlore",
author = "Leeseung Kang and An, {Hye Lan} and Kim, {Tae Hyung} and Lee, {Duk Hee} and Park, {Kyung Soo} and Basudev Swain and Lee, {Chan Gi} and Sahn Nahm",
year = "2016",
month = "8",
day = "21",
doi = "10.1016/j.apsusc.2016.12.162",
language = "English",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effect of controlled Mn doping on transition of oxygen vacancies in Bi2Ti2O7 thin films

T2 - An electrochemical study

AU - Kang, Leeseung

AU - An, Hye Lan

AU - Kim, Tae Hyung

AU - Lee, Duk Hee

AU - Park, Kyung Soo

AU - Swain, Basudev

AU - Lee, Chan Gi

AU - Nahm, Sahn

PY - 2016/8/21

Y1 - 2016/8/21

N2 - Crystalline pyrochlore Bi2Ti2O7 (B2T2) thin films were well formed at 300C under 740mTorr of oxygen partial pressure using pulsed laser deposition. In order to improve the electrical properties of the dielectric B2T2 films, Mn ions were doped into the films and their influence was investigated. Improvement in electrical behavior, especially leakage current density were revealed via impedance spectroscopy and electrochemical studies. Mn doping at an appropriate level improved the electrical properties of the films by affording extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies acting as electron trap sites at the interface between the Pt electrode and the B2T2 film. Schottky emission was posited as the leakage current mechanism in the 10 mol% Mn doped B2T2 (Mn:B2T2) films. The barrier height between the Pt electrode and the Mn:B2T2 film was approximately 1.46eV, but decreased to 0.51eV for the non-doped film due to large numbers of intrinsic oxygen vacancies.

AB - Crystalline pyrochlore Bi2Ti2O7 (B2T2) thin films were well formed at 300C under 740mTorr of oxygen partial pressure using pulsed laser deposition. In order to improve the electrical properties of the dielectric B2T2 films, Mn ions were doped into the films and their influence was investigated. Improvement in electrical behavior, especially leakage current density were revealed via impedance spectroscopy and electrochemical studies. Mn doping at an appropriate level improved the electrical properties of the films by affording extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies acting as electron trap sites at the interface between the Pt electrode and the B2T2 film. Schottky emission was posited as the leakage current mechanism in the 10 mol% Mn doped B2T2 (Mn:B2T2) films. The barrier height between the Pt electrode and the Mn:B2T2 film was approximately 1.46eV, but decreased to 0.51eV for the non-doped film due to large numbers of intrinsic oxygen vacancies.

KW - BiTiO

KW - Leakage current mechanism

KW - Metal-insulator-metal capacitor

KW - Pyrochlore

UR - http://www.scopus.com/inward/record.url?scp=85009262017&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85009262017&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2016.12.162

DO - 10.1016/j.apsusc.2016.12.162

M3 - Article

AN - SCOPUS:85009262017

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -