Effect of controlled Mn doping on transition of oxygen vacancies in Bi 2 Ti 2 O 7 thin films: An electrochemical study

Leeseung Kang, Hye Lan An, Tae Hyung Kim, Duk Hee Lee, Kyung Soo Park, Basudev Swain, Chan Gi Lee, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Crystalline pyrochlore Bi 2 Ti 2 O 7 (B 2 T 2 ) thin films were well formed at 300 °C under 740 mTorr of oxygen partial pressure using pulsed laser deposition. In order to improve the electrical properties of the dielectric B 2 T 2 films, Mn ions were doped into the films and their influence was investigated. Improvement in electrical behavior, especially leakage current density were revealed via impedance spectroscopy and electrochemical studies. Mn doping at an appropriate level improved the electrical properties of the films by affording extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies acting as electron trap sites at the interface between the Pt electrode and the B 2 T 2 film. Schottky emission was posited as the leakage current mechanism in the 10 mol% Mn doped B 2 T 2 (Mn:B 2 T 2 ) films. The barrier height between the Pt electrode and the Mn:B 2 T 2 film was approximately 1.46 eV, but decreased to 0.51 eV for the non-doped film due to large numbers of intrinsic oxygen vacancies.

Original languageEnglish
Pages (from-to)75-79
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 2017 Sep 1


  • Bi Ti O
  • Leakage current mechanism
  • Metal-insulator-metal capacitor
  • Pyrochlore

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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