Effect of crystal thickness of separate confinement heterostructure layers on 1.55-μm loss-coupled dfb laser characteristics

Jae Ho Han, Sung Woong Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated the effect of the crystal thickness of the separate confinement heterostructure (SCH) guiding layers on the characteristics (threshold current, quantum efficiency) of 1550-nm loss-coupled Distributed Feedback laser diode fabricated with a simple step growth having an automatically buried absorptive grating InAsP layer. By increasing the thickness of SCH crystal layers from 40-nm to 80-nm in both below and above the multi-quantum well region, we could achieve lower threshold currents both in 25°C and 85°C with increased ratio of quantum efficiencies between two temperatures.

Original languageEnglish
Pages (from-to)707-712
Number of pages6
JournalCrystal Research and Technology
Volume42
Issue number7
DOIs
Publication statusPublished - 2007 Jul 1
Externally publishedYes

Fingerprint

Quantum efficiency
Heterojunctions
threshold currents
Crystals
Lasers
Distributed feedback lasers
quantum efficiency
Semiconductor quantum wells
crystals
lasers
Semiconductor lasers
distributed feedback lasers
semiconductor lasers
quantum wells
gratings
Temperature
temperature

Keywords

  • Distributed feedback lasers
  • Heterostructure
  • Quantum well lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effect of crystal thickness of separate confinement heterostructure layers on 1.55-μm loss-coupled dfb laser characteristics. / Han, Jae Ho; Park, Sung Woong.

In: Crystal Research and Technology, Vol. 42, No. 7, 01.07.2007, p. 707-712.

Research output: Contribution to journalArticle

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