Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

Hyung Woo Ahn, Doo Seok Jeong, Byung Ki Cheong, Hosuk Lee, Hosun Lee, Su Dong Kim, Sang Yeol Shin, Donghwan Kim, Suyoun Lee

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Abstract

We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device.

Original languageEnglish
Article number042908
JournalApplied Physics Letters
Volume103
Issue number4
DOIs
Publication statusPublished - 2013 Jul 22

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ahn, H. W., Seok Jeong, D., Cheong, B. K., Lee, H., Lee, H., Kim, S. D., Shin, S. Y., Kim, D., & Lee, S. (2013). Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films. Applied Physics Letters, 103(4), [042908]. https://doi.org/10.1063/1.4816349