Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

Hyung Woo Ahn; Doo Seok Jeong; Byung Ki Cheong; Hosuk Lee; Hosun Lee; Su Dong Kim; Sang Yeol Shin; Donghwan Kim; Suyoun Lee

doi:10.1063/1.4816349

Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

Hyung Woo Ahn, Doo Seok Jeong, Byung Ki Cheong, Hosuk Lee, Hosun Lee, Su Dong Kim, Sang Yeol Shin, Donghwan Kim, Suyoun Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

18 Citations (Scopus)

Abstract

We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device.

Original language	English
Article number	042908
Journal	Applied Physics Letters
Volume	103
Issue number	4
DOIs	https://doi.org/10.1063/1.4816349
Publication status	Published - 2013 Jul 22

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Ahn, H. W., Seok Jeong, D., Cheong, B. K., Lee, H., Lee, H., Kim, S. D., Shin, S. Y., Kim, D., & Lee, S. (2013). Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films. Applied Physics Letters, 103(4), [042908]. https://doi.org/10.1063/1.4816349

Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films. / Ahn, Hyung Woo; Seok Jeong, Doo; Cheong, Byung Ki; Lee, Hosuk; Lee, Hosun; Kim, Su Dong; Shin, Sang Yeol; Kim, Donghwan; Lee, Suyoun.

In: Applied Physics Letters, Vol. 103, No. 4, 042908, 22.07.2013.

Research output: Contribution to journal › Article

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