Effect of deposition pressure on the electrical properties of nitrogen-doped amorphous carbon films

Hyungon Oh, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we investigate the effect of the deposition pressure on the electrical properties of nitrogen-doped amorphous carbon (a-C:N) films deposited by using an unbalanced DC magnetron sputtering method. As the deposition pressure is decreased from 9 to 1 mTorr, the resistivity decreases from 7.88 to 2.68 × 10 <sup>−2</sup> Ω·cm while the deposition rate increases from 3.5 to 4.4 nm/min. The decrease in resistivity is caused by increases in both the carrier concentration and mobility. As the pressure is decreased, the carrier concentration increases from 1.9 × 10<sup>14</sup> to 7.8 × 10<sup>20</sup> cm <sup>−3</sup>, and the mobility increases from 0.01 to 0.3 cm<sup>2</sup>/V·sec. X-ray photoelectron spectroscopy and Raman spectroscopy reveal that the improved electrical properties of the film deposited at a lower pressure are the result of a higher fraction of sp<sup>2</sup> bonding.

Original languageEnglish
Pages (from-to)638-642
Number of pages5
JournalJournal of the Korean Physical Society
Volume67
Issue number4
DOIs
Publication statusPublished - 2015 Aug 7

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electrical properties
nitrogen
carbon
electrical resistivity
magnetron sputtering
low pressure
Raman spectroscopy
direct current
photoelectron spectroscopy
spectroscopy
x rays

Keywords

  • Bonding state
  • DC magnetron sputtering
  • Nitrogen-doped amorphous carbon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Effect of deposition pressure on the electrical properties of nitrogen-doped amorphous carbon films. / Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig.

In: Journal of the Korean Physical Society, Vol. 67, No. 4, 07.08.2015, p. 638-642.

Research output: Contribution to journalArticle

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AB - In this study, we investigate the effect of the deposition pressure on the electrical properties of nitrogen-doped amorphous carbon (a-C:N) films deposited by using an unbalanced DC magnetron sputtering method. As the deposition pressure is decreased from 9 to 1 mTorr, the resistivity decreases from 7.88 to 2.68 × 10 −2 Ω·cm while the deposition rate increases from 3.5 to 4.4 nm/min. The decrease in resistivity is caused by increases in both the carrier concentration and mobility. As the pressure is decreased, the carrier concentration increases from 1.9 × 1014 to 7.8 × 1020 cm −3, and the mobility increases from 0.01 to 0.3 cm2/V·sec. X-ray photoelectron spectroscopy and Raman spectroscopy reveal that the improved electrical properties of the film deposited at a lower pressure are the result of a higher fraction of sp2 bonding.

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