Effect of device layout on the stability of RF MOSFETs

Yongho Oh, Jae-Sung Rieh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, the stability of RF MOSFETs is investigated in terms of the stability-factor (k-factor) for various layout schemes and device dimensions based on two different RFCMOS technologies. To systematically analyze the effect of small-signal device model parameters on RF MOSFET stability, the expression for k-factor is derived as a function of the small-signal model parameters of RF MOSFETs. Based on the expression, the effect of small-signal model parameters on the stability of RF MOSFETs is explored along with its bias dependence. In addition, the effect of wiring schemes, number of gate fingers, gate finger pitch, and gate length is examined based on various device structures. It is shown that the transconductance and capacitances are the dominant device parameters to determine the stability of RF MOSFETs. The result also indicates that the stability of RF MOSFETs is strongly affected by the details of layout scheme and lateral dimension. Additionally, it was found that there is a tradeoff between device stability and speed. This study is expected to serve a guideline for the device design and optimization for stable operation of RF MOSFETs and circuits based on them.

Original languageEnglish
Article number6494353
Pages (from-to)1861-1869
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume61
Issue number5
DOIs
Publication statusPublished - 2013 Apr 9

Fingerprint

layouts
field effect transistors
wiring
Transconductance
transconductance
Electric wiring
tradeoffs
Capacitance
capacitance
optimization
Networks (circuits)

Keywords

  • RF MOSFETs
  • small-signal model
  • stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

Cite this

Effect of device layout on the stability of RF MOSFETs. / Oh, Yongho; Rieh, Jae-Sung.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 61, No. 5, 6494353, 09.04.2013, p. 1861-1869.

Research output: Contribution to journalArticle

@article{ae96088782ed48b8b2c3a9f5bd136b07,
title = "Effect of device layout on the stability of RF MOSFETs",
abstract = "In this paper, the stability of RF MOSFETs is investigated in terms of the stability-factor (k-factor) for various layout schemes and device dimensions based on two different RFCMOS technologies. To systematically analyze the effect of small-signal device model parameters on RF MOSFET stability, the expression for k-factor is derived as a function of the small-signal model parameters of RF MOSFETs. Based on the expression, the effect of small-signal model parameters on the stability of RF MOSFETs is explored along with its bias dependence. In addition, the effect of wiring schemes, number of gate fingers, gate finger pitch, and gate length is examined based on various device structures. It is shown that the transconductance and capacitances are the dominant device parameters to determine the stability of RF MOSFETs. The result also indicates that the stability of RF MOSFETs is strongly affected by the details of layout scheme and lateral dimension. Additionally, it was found that there is a tradeoff between device stability and speed. This study is expected to serve a guideline for the device design and optimization for stable operation of RF MOSFETs and circuits based on them.",
keywords = "RF MOSFETs, small-signal model, stability",
author = "Yongho Oh and Jae-Sung Rieh",
year = "2013",
month = "4",
day = "9",
doi = "10.1109/TMTT.2013.2252918",
language = "English",
volume = "61",
pages = "1861--1869",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Effect of device layout on the stability of RF MOSFETs

AU - Oh, Yongho

AU - Rieh, Jae-Sung

PY - 2013/4/9

Y1 - 2013/4/9

N2 - In this paper, the stability of RF MOSFETs is investigated in terms of the stability-factor (k-factor) for various layout schemes and device dimensions based on two different RFCMOS technologies. To systematically analyze the effect of small-signal device model parameters on RF MOSFET stability, the expression for k-factor is derived as a function of the small-signal model parameters of RF MOSFETs. Based on the expression, the effect of small-signal model parameters on the stability of RF MOSFETs is explored along with its bias dependence. In addition, the effect of wiring schemes, number of gate fingers, gate finger pitch, and gate length is examined based on various device structures. It is shown that the transconductance and capacitances are the dominant device parameters to determine the stability of RF MOSFETs. The result also indicates that the stability of RF MOSFETs is strongly affected by the details of layout scheme and lateral dimension. Additionally, it was found that there is a tradeoff between device stability and speed. This study is expected to serve a guideline for the device design and optimization for stable operation of RF MOSFETs and circuits based on them.

AB - In this paper, the stability of RF MOSFETs is investigated in terms of the stability-factor (k-factor) for various layout schemes and device dimensions based on two different RFCMOS technologies. To systematically analyze the effect of small-signal device model parameters on RF MOSFET stability, the expression for k-factor is derived as a function of the small-signal model parameters of RF MOSFETs. Based on the expression, the effect of small-signal model parameters on the stability of RF MOSFETs is explored along with its bias dependence. In addition, the effect of wiring schemes, number of gate fingers, gate finger pitch, and gate length is examined based on various device structures. It is shown that the transconductance and capacitances are the dominant device parameters to determine the stability of RF MOSFETs. The result also indicates that the stability of RF MOSFETs is strongly affected by the details of layout scheme and lateral dimension. Additionally, it was found that there is a tradeoff between device stability and speed. This study is expected to serve a guideline for the device design and optimization for stable operation of RF MOSFETs and circuits based on them.

KW - RF MOSFETs

KW - small-signal model

KW - stability

UR - http://www.scopus.com/inward/record.url?scp=84877774969&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877774969&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2013.2252918

DO - 10.1109/TMTT.2013.2252918

M3 - Article

AN - SCOPUS:84877774969

VL - 61

SP - 1861

EP - 1869

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 5

M1 - 6494353

ER -