Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes

Jaecheon Han, Gucheol Kang, Daesung Kang, Yongtae Moon, Hwanhee Jeong, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticle

Abstract

We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70 C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.

Original languageEnglish
Pages (from-to)2876-2880
Number of pages5
JournalJournal of Electronic Materials
Volume42
Issue number10
DOIs
Publication statusPublished - 2013 Oct 1

Fingerprint

Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
output
Wavelength
wavelengths
Indium
Quantum efficiency
Temperature
temperature
indium
quantum efficiency
degradation
Degradation

Keywords

  • droop
  • GaN
  • light-emitting diode
  • Quantum well

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes. / Han, Jaecheon; Kang, Gucheol; Kang, Daesung; Moon, Yongtae; Jeong, Hwanhee; Song, June O.; Seong, Tae Yeon.

In: Journal of Electronic Materials, Vol. 42, No. 10, 01.10.2013, p. 2876-2880.

Research output: Contribution to journalArticle

Han, Jaecheon ; Kang, Gucheol ; Kang, Daesung ; Moon, Yongtae ; Jeong, Hwanhee ; Song, June O. ; Seong, Tae Yeon. / Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes. In: Journal of Electronic Materials. 2013 ; Vol. 42, No. 10. pp. 2876-2880.
@article{026f682d1d824ba480343c9d45d7c939,
title = "Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes",
abstract = "We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4{\%} higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70 C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.",
keywords = "droop, GaN, light-emitting diode, Quantum well",
author = "Jaecheon Han and Gucheol Kang and Daesung Kang and Yongtae Moon and Hwanhee Jeong and Song, {June O.} and Seong, {Tae Yeon}",
year = "2013",
month = "10",
day = "1",
doi = "10.1007/s11664-013-2704-y",
language = "English",
volume = "42",
pages = "2876--2880",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "10",

}

TY - JOUR

T1 - Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes

AU - Han, Jaecheon

AU - Kang, Gucheol

AU - Kang, Daesung

AU - Moon, Yongtae

AU - Jeong, Hwanhee

AU - Song, June O.

AU - Seong, Tae Yeon

PY - 2013/10/1

Y1 - 2013/10/1

N2 - We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70 C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.

AB - We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70 C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.

KW - droop

KW - GaN

KW - light-emitting diode

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=84883598502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883598502&partnerID=8YFLogxK

U2 - 10.1007/s11664-013-2704-y

DO - 10.1007/s11664-013-2704-y

M3 - Article

VL - 42

SP - 2876

EP - 2880

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 10

ER -