Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes

Jaecheon Han, Gucheol Kang, Daesung Kang, Yongtae Moon, Hwanhee Jeong, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticle

Abstract

We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70 C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.

Original languageEnglish
Pages (from-to)2876-2880
Number of pages5
JournalJournal of Electronic Materials
Volume42
Issue number10
DOIs
Publication statusPublished - 2013 Oct

Keywords

  • GaN
  • Quantum well
  • droop
  • light-emitting diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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