Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes

Jaecheon Han; Gucheol Kang; Daesung Kang; Yongtae Moon; Hwanhee Jeong; June O. Song; Tae Yeon Seong

doi:10.1007/s11664-013-2704-y

Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes

Jaecheon Han, Gucheol Kang, Daesung Kang, Yongtae Moon, Hwanhee Jeong, June O. Song, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70 C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.

Original language	English
Pages (from-to)	2876-2880
Number of pages	5
Journal	Journal of Electronic Materials
Volume	42
Issue number	10
DOIs	https://doi.org/10.1007/s11664-013-2704-y
Publication status	Published - 2013 Oct

Keywords

GaN
Quantum well
droop
light-emitting diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-013-2704-y

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@article{026f682d1d824ba480343c9d45d7c939,

title = "Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes",

abstract = "We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70 C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.",

keywords = "GaN, Quantum well, droop, light-emitting diode",

author = "Jaecheon Han and Gucheol Kang and Daesung Kang and Yongtae Moon and Hwanhee Jeong and Song, {June O.} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by LG Innotek, Co., Ltd., the World Class University program through the National Research Foundation of Korea funded by MEST (R33-2008-000-10025-0), and the Industrial Technology Development Program funded by the Ministry of Knowledge Economy (MKE), Korea.",

year = "2013",

month = oct,

doi = "10.1007/s11664-013-2704-y",

language = "English",

volume = "42",

pages = "2876--2880",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes

AU - Han, Jaecheon

AU - Kang, Gucheol

AU - Kang, Daesung

AU - Moon, Yongtae

AU - Jeong, Hwanhee

AU - Song, June O.

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by LG Innotek, Co., Ltd., the World Class University program through the National Research Foundation of Korea funded by MEST (R33-2008-000-10025-0), and the Industrial Technology Development Program funded by the Ministry of Knowledge Economy (MKE), Korea.

PY - 2013/10

Y1 - 2013/10

N2 - We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70 C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.

AB - We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70 C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.

KW - GaN

KW - Quantum well

KW - droop

KW - light-emitting diode

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

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Effect of different quantum well structures on the output power performance of gan-based light-emitting diodes

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Keywords

ASJC Scopus subject areas

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