Effect of electric field on chemical mechanical polishing of langasite

Dae-Soon Lim, In Ho Yoon, Steven Danyluk

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The effect of dc electric fields on material removal rates of single crystal langasite during the chemical mechanical polishing process was investigated. The removal rate of the langasite in the commercial silica slurry was increased by up to 30% with a dc electric field ranging from -300 to +300 V/mm. The motion of slurry particles by surface charge was responsible for the electrical field-assisted chemical mechanical polishing (EFACMP) of langasite observed in this study. The effect of electric fields on chemical mechanical polishing is explained by the variation of the particle concentration due to the attraction to either the langasite surface or the pad by surface charge. The variation of the slurry particles near the langasite surface due to the electric field was confirmed experimentally by hardness variation in the slurry.

Original languageEnglish
Pages (from-to)397-400
Number of pages4
JournalWear
Volume249
Issue number5-6
DOIs
Publication statusPublished - 2001 Jun 1

Fingerprint

Chemical mechanical polishing
polishing
Electric fields
electric fields
Surface charge
machining
attraction
hardness
Silicon Dioxide
Hardness
Silica
Single crystals
silicon dioxide
La3Ga5SiO14
single crystals

Keywords

  • CMP
  • Electric field
  • Langasite
  • Slurry

ASJC Scopus subject areas

  • Engineering(all)
  • Mechanical Engineering
  • Surfaces, Coatings and Films

Cite this

Effect of electric field on chemical mechanical polishing of langasite. / Lim, Dae-Soon; Yoon, In Ho; Danyluk, Steven.

In: Wear, Vol. 249, No. 5-6, 01.06.2001, p. 397-400.

Research output: Contribution to journalArticle

Lim, Dae-Soon ; Yoon, In Ho ; Danyluk, Steven. / Effect of electric field on chemical mechanical polishing of langasite. In: Wear. 2001 ; Vol. 249, No. 5-6. pp. 397-400.
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