Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

Min Ju Yun, Hee Dong Kim, Seok Man Hong, Ju Hyun Park, Dong Su Jeon, Tae Geun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)


The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells are formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.

Original languageEnglish
Article number094305
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2014 Mar 17


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this