Effect of energy level of hole-blocking layer on the electroluminescence characteristics of highly soluble ir(Iii) complex based phosphorescent organic light-emitting diodes

Young Wook Park; Young Min Kim; Jin Hwan Choi; Tae Hyun Park; Jin Wook Jung; Byeong Kwon Ju; Min Ju Cho; Dong Hoon Choi

doi:10.1889/1.3256673

Effect of energy level of hole-blocking layer on the electroluminescence characteristics of highly soluble ir(Iii) complex based phosphorescent organic light-emitting diodes

Young Wook Park, Young Min Kim, Jin Hwan Choi, Tae Hyun Park, Jin Wook Jung, Byeong Kwon Ju, Min Ju Cho, Dong Hoon Choi

Research output: Contribution to journal › Conference article

Abstract

In this report, we’ve demonstrated the highly efficient electroluminescence (EL) of highly soluble Iridium(III) tris(9-(6-Phenyl-pyridin-3-ylmethyl)-9H-Carbazole) based polymer light-emitting diodes utilizing balanced carrier distribution and exciton confinement by controlling energy level of hole blocking layer. By applying wide band gap hole-blocking material of 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole, the EL efficiency was remarkably improved than with the 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline.

Original language	English
Pages (from-to)	1740-1743
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	40
Issue number	1
DOIs	https://doi.org/10.1889/1.3256673
Publication status	Published - 2009 Jan 1
Event	2009 Vehicles and Photons Symposium - Dearborn, MI, United States Duration: 2009 Oct 15 → 2009 Oct 16

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ASJC Scopus subject areas

Engineering(all)

Cite this

Park, Y. W., Kim, Y. M., Choi, J. H., Park, T. H., Jung, J. W., Ju, B. K., Cho, M. J., & Choi, D. H. (2009). Effect of energy level of hole-blocking layer on the electroluminescence characteristics of highly soluble ir(Iii) complex based phosphorescent organic light-emitting diodes. Digest of Technical Papers - SID International Symposium, 40(1), 1740-1743. https://doi.org/10.1889/1.3256673

Effect of energy level of hole-blocking layer on the electroluminescence characteristics of highly soluble ir(Iii) complex based phosphorescent organic light-emitting diodes. / Park, Young Wook; Kim, Young Min; Choi, Jin Hwan; Park, Tae Hyun; Jung, Jin Wook; Ju, Byeong Kwon; Cho, Min Ju; Choi, Dong Hoon.

In: Digest of Technical Papers - SID International Symposium, Vol. 40, No. 1, 01.01.2009, p. 1740-1743.

Research output: Contribution to journal › Conference article

Park, YW, Kim, YM, Choi, JH, Park, TH, Jung, JW, Ju, BK, Cho, MJ & Choi, DH 2009, 'Effect of energy level of hole-blocking layer on the electroluminescence characteristics of highly soluble ir(Iii) complex based phosphorescent organic light-emitting diodes', Digest of Technical Papers - SID International Symposium, vol. 40, no. 1, pp. 1740-1743. https://doi.org/10.1889/1.3256673

Park, Young Wook ; Kim, Young Min ; Choi, Jin Hwan ; Park, Tae Hyun ; Jung, Jin Wook ; Ju, Byeong Kwon ; Cho, Min Ju ; Choi, Dong Hoon. / Effect of energy level of hole-blocking layer on the electroluminescence characteristics of highly soluble ir(Iii) complex based phosphorescent organic light-emitting diodes. In: Digest of Technical Papers - SID International Symposium. 2009 ; Vol. 40, No. 1. pp. 1740-1743.

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abstract = "In this report, we{\textquoteright}ve demonstrated the highly efficient electroluminescence (EL) of highly soluble Iridium(III) tris(9-(6-Phenyl-pyridin-3-ylmethyl)-9H-Carbazole) based polymer light-emitting diodes utilizing balanced carrier distribution and exciton confinement by controlling energy level of hole blocking layer. By applying wide band gap hole-blocking material of 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole, the EL efficiency was remarkably improved than with the 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline.",

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10.1889/1.3256673