Abstract
In this report, we’ve demonstrated the highly efficient electroluminescence (EL) of highly soluble Iridium(III) tris(9-(6-Phenyl-pyridin-3-ylmethyl)-9H-Carbazole) based polymer light-emitting diodes utilizing balanced carrier distribution and exciton confinement by controlling energy level of hole blocking layer. By applying wide band gap hole-blocking material of 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole, the EL efficiency was remarkably improved than with the 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline.
| Original language | English |
|---|---|
| Pages (from-to) | 1740-1743 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 40 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2009 Jan 1 |
| Event | 2009 Vehicles and Photons Symposium - Dearborn, MI, United States Duration: 2009 Oct 15 → 2009 Oct 16 |
ASJC Scopus subject areas
- Engineering(all)
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Park, Y. W., Kim, Y. M., Choi, J. H., Park, T. H., Jung, J. W., Ju, B. K., Cho, M. J., & Choi, D. H. (2009). Effect of energy level of hole-blocking layer on the electroluminescence characteristics of highly soluble ir(Iii) complex based phosphorescent organic light-emitting diodes. Digest of Technical Papers - SID International Symposium, 40(1), 1740-1743. https://doi.org/10.1889/1.3256673