Effect of excimer laser annealing on optical properties of GaN films deposited by R.F. magnetron sputtering

Man Young Sung, Woong Je Sung, Yong Il Lee, Chun Il Park, Woo Beom Choi, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN thin films on sapphire were grown by RF magnetron sputtering with ZnO buffer layer. The tremendous mismatch between the lattices of GaN and sapphire can be partly overcome by the use of thin buffer layer of ZnO. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction (XRD). The properties of the sputtered GaN are strongly dependent on ZnO buffer layer thickness. The optimum thickness of ZnO buffer layer is around 30nm. Using XRD analysis, we have found the optimal substrate temperature which can grow high quality GaN thin film. In addition, the effect of excimer laser annealing (ELA) on structural and electrical properties of GaN thin films was investigated. The surface roughness and images according to the laser energy density were investigated by atomic force microscopy (AFM) and it was confirmed that the crystallization was improved by increasing laser energy density.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, H. Riechert
Pages61-66
Number of pages6
Volume693
Publication statusPublished - 2002
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30

Other

OtherGaN and Related Alloys-2001
CountryUnited States
CityBoston, MA
Period01/11/2601/11/30

Fingerprint

Excimer lasers
Buffer layers
Magnetron sputtering
Optical properties
Annealing
Aluminum Oxide
Sapphire
Thin films
Lasers
Crystallization
X ray diffraction analysis
Structural properties
Atomic force microscopy
Electric properties
Surface roughness
X ray diffraction
Substrates
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Sung, M. Y., Sung, W. J., Lee, Y. I., Park, C. I., Choi, W. B., & Kim, S. (2002). Effect of excimer laser annealing on optical properties of GaN films deposited by R.F. magnetron sputtering. In J. E. Northrup, J. Neugebauer, D. C. Look, S. F. Chichibu, & H. Riechert (Eds.), Materials Research Society Symposium - Proceedings (Vol. 693, pp. 61-66)

Effect of excimer laser annealing on optical properties of GaN films deposited by R.F. magnetron sputtering. / Sung, Man Young; Sung, Woong Je; Lee, Yong Il; Park, Chun Il; Choi, Woo Beom; Kim, Sangsig.

Materials Research Society Symposium - Proceedings. ed. / J.E. Northrup; J. Neugebauer; D.C. Look; S.F. Chichibu; H. Riechert. Vol. 693 2002. p. 61-66.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sung, MY, Sung, WJ, Lee, YI, Park, CI, Choi, WB & Kim, S 2002, Effect of excimer laser annealing on optical properties of GaN films deposited by R.F. magnetron sputtering. in JE Northrup, J Neugebauer, DC Look, SF Chichibu & H Riechert (eds), Materials Research Society Symposium - Proceedings. vol. 693, pp. 61-66, GaN and Related Alloys-2001, Boston, MA, United States, 01/11/26.
Sung MY, Sung WJ, Lee YI, Park CI, Choi WB, Kim S. Effect of excimer laser annealing on optical properties of GaN films deposited by R.F. magnetron sputtering. In Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H, editors, Materials Research Society Symposium - Proceedings. Vol. 693. 2002. p. 61-66
Sung, Man Young ; Sung, Woong Je ; Lee, Yong Il ; Park, Chun Il ; Choi, Woo Beom ; Kim, Sangsig. / Effect of excimer laser annealing on optical properties of GaN films deposited by R.F. magnetron sputtering. Materials Research Society Symposium - Proceedings. editor / J.E. Northrup ; J. Neugebauer ; D.C. Look ; S.F. Chichibu ; H. Riechert. Vol. 693 2002. pp. 61-66
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