Effect of excimer laser annealing on optical properties of GaN films deposited by R.F. magnetron sputtering

Man Young Sung, Woong Je Sung, Yong Il Lee, Chun Il Park, Woo Beom Choi, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution


GaN thin films on sapphire were grown by RF magnetron sputtering with ZnO buffer layer. The tremendous mismatch between the lattices of GaN and sapphire can be partly overcome by the use of thin buffer layer of ZnO. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction (XRD). The properties of the sputtered GaN are strongly dependent on ZnO buffer layer thickness. The optimum thickness of ZnO buffer layer is around 30nm. Using XRD analysis, we have found the optimal substrate temperature which can grow high quality GaN thin film. In addition, the effect of excimer laser annealing (ELA) on structural and electrical properties of GaN thin films was investigated. The surface roughness and images according to the laser energy density were investigated by atomic force microscopy (AFM) and it was confirmed that the crystallization was improved by increasing laser energy density.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, H. Riechert
Number of pages6
Publication statusPublished - 2002
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30


OtherGaN and Related Alloys-2001
CountryUnited States
CityBoston, MA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Sung, M. Y., Sung, W. J., Lee, Y. I., Park, C. I., Choi, W. B., & Kim, S. (2002). Effect of excimer laser annealing on optical properties of GaN films deposited by R.F. magnetron sputtering. In J. E. Northrup, J. Neugebauer, D. C. Look, S. F. Chichibu, & H. Riechert (Eds.), Materials Research Society Symposium - Proceedings (Vol. 693, pp. 61-66)