Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method

Kyoungwon Kim; Sangsig Kim; Sang Yeol Lee

doi:10.1016/j.cap.2011.09.006

Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method

Kyoungwon Kim, Sangsig Kim, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH ₃COO)₂], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (λ = 248, KrF) source with energy density of 50 mJ/cm² for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature.

Original language	English
Pages (from-to)	585-588
Number of pages	4
Journal	Current Applied Physics
Volume	12
Issue number	2
DOIs	https://doi.org/10.1016/j.cap.2011.09.006
Publication status	Published - 2012 Mar

Keywords

Excimer laser
Laser annealing
ZnO

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2011.09.006

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@article{ac1cfb27eb9549e3ae1cba3d8ede414b,

title = "Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method",

abstract = "Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH 3COO)2], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (λ = 248, KrF) source with energy density of 50 mJ/cm2 for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature.",

keywords = "Excimer laser, Laser annealing, ZnO",

author = "Kyoungwon Kim and Sangsig Kim and Lee, {Sang Yeol}",

note = "Funding Information: This research was supported by a grant (code #: 2011K000208 ) Center for Nanostructured Materials Technology {\textquoteright} under {\textquoteleft}21st Century Frontier R&D Programs{\textquoteright} of the Ministry of Education, Science and Technology, Korea, as well as by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Knowledge and Economy (MKE), South Korea.",

year = "2012",

month = mar,

doi = "10.1016/j.cap.2011.09.006",

language = "English",

volume = "12",

pages = "585--588",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method

AU - Kim, Kyoungwon

AU - Kim, Sangsig

AU - Lee, Sang Yeol

N1 - Funding Information: This research was supported by a grant (code #: 2011K000208 ) Center for Nanostructured Materials Technology ’ under ‘21st Century Frontier R&D Programs’ of the Ministry of Education, Science and Technology, Korea, as well as by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Knowledge and Economy (MKE), South Korea.

PY - 2012/3

Y1 - 2012/3

N2 - Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH 3COO)2], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (λ = 248, KrF) source with energy density of 50 mJ/cm2 for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature.

AB - Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH 3COO)2], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (λ = 248, KrF) source with energy density of 50 mJ/cm2 for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature.

KW - Excimer laser

KW - Laser annealing

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=81155123054&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2011.09.006

DO - 10.1016/j.cap.2011.09.006

M3 - Article

AN - SCOPUS:81155123054

VL - 12

SP - 585

EP - 588

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 2

ER -

Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method

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Keywords

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