Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors

B. S. Kang, S. Kim, Ji Hyun Kim, F. Ren, K. Baik, S. J. Pearton, B. P. Gila, C. R. Abernathy, C. C. Pan, G. T. Chen, J. I. Chyi, V. Chandrasekaran, M. Sheplak, T. Nishida, S. N G Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The changes in conductance of the channel of AlGaN/GaN high electron mobility transistor structures during application of both tensile and compressive strain were measured. For fixed Al mole fraction, the changes in conductance were roughly linear over the range up to 2.7 × 10 8 N.cm -2, with coefficients for planar devices of -6.0 +/- 2.5 × 10 -10 S.N -1.m -2 for tensile strain and +9.5+/-3.5 × 10 -10 S.N -1 .m -2 for compressive strain. For mesa-isolated structures, the coefficients were smaller due to the reduced effect of the AlGaN strain, with values of 5.5 +/- 1.1 × 10 -13 S.N -1.m -2 for tensile strain and 4.8 × 10 -13 S.N -1 .m -2 for compressive strain. The large changes in conductance demonstrate that simple AlGaN/GaN heterostructures are promising for pressure and strain sensor applications.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsR.F. Kopt, A.G. Baca, S.J. Pearton, F. Ren
Pages292-297
Number of pages6
Volume11
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period03/10/1203/10/17

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High electron mobility transistors
Tensile strain
Heterojunctions
Sensors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kang, B. S., Kim, S., Kim, J. H., Ren, F., Baik, K., Pearton, S. J., ... Chu, S. N. G. (2003). Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors. In R. F. Kopt, A. G. Baca, S. J. Pearton, & F. Ren (Eds.), Proceedings - Electrochemical Society (Vol. 11, pp. 292-297)

Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors. / Kang, B. S.; Kim, S.; Kim, Ji Hyun; Ren, F.; Baik, K.; Pearton, S. J.; Gila, B. P.; Abernathy, C. R.; Pan, C. C.; Chen, G. T.; Chyi, J. I.; Chandrasekaran, V.; Sheplak, M.; Nishida, T.; Chu, S. N G.

Proceedings - Electrochemical Society. ed. / R.F. Kopt; A.G. Baca; S.J. Pearton; F. Ren. Vol. 11 2003. p. 292-297.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, BS, Kim, S, Kim, JH, Ren, F, Baik, K, Pearton, SJ, Gila, BP, Abernathy, CR, Pan, CC, Chen, GT, Chyi, JI, Chandrasekaran, V, Sheplak, M, Nishida, T & Chu, SNG 2003, Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors. in RF Kopt, AG Baca, SJ Pearton & F Ren (eds), Proceedings - Electrochemical Society. vol. 11, pp. 292-297, State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 03/10/12.
Kang BS, Kim S, Kim JH, Ren F, Baik K, Pearton SJ et al. Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors. In Kopt RF, Baca AG, Pearton SJ, Ren F, editors, Proceedings - Electrochemical Society. Vol. 11. 2003. p. 292-297
Kang, B. S. ; Kim, S. ; Kim, Ji Hyun ; Ren, F. ; Baik, K. ; Pearton, S. J. ; Gila, B. P. ; Abernathy, C. R. ; Pan, C. C. ; Chen, G. T. ; Chyi, J. I. ; Chandrasekaran, V. ; Sheplak, M. ; Nishida, T. ; Chu, S. N G. / Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors. Proceedings - Electrochemical Society. editor / R.F. Kopt ; A.G. Baca ; S.J. Pearton ; F. Ren. Vol. 11 2003. pp. 292-297
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AU - Ren, F.

AU - Baik, K.

AU - Pearton, S. J.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Chandrasekaran, V.

AU - Sheplak, M.

AU - Nishida, T.

AU - Chu, S. N G

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N2 - The changes in conductance of the channel of AlGaN/GaN high electron mobility transistor structures during application of both tensile and compressive strain were measured. For fixed Al mole fraction, the changes in conductance were roughly linear over the range up to 2.7 × 10 8 N.cm -2, with coefficients for planar devices of -6.0 +/- 2.5 × 10 -10 S.N -1.m -2 for tensile strain and +9.5+/-3.5 × 10 -10 S.N -1 .m -2 for compressive strain. For mesa-isolated structures, the coefficients were smaller due to the reduced effect of the AlGaN strain, with values of 5.5 +/- 1.1 × 10 -13 S.N -1.m -2 for tensile strain and 4.8 × 10 -13 S.N -1 .m -2 for compressive strain. The large changes in conductance demonstrate that simple AlGaN/GaN heterostructures are promising for pressure and strain sensor applications.

AB - The changes in conductance of the channel of AlGaN/GaN high electron mobility transistor structures during application of both tensile and compressive strain were measured. For fixed Al mole fraction, the changes in conductance were roughly linear over the range up to 2.7 × 10 8 N.cm -2, with coefficients for planar devices of -6.0 +/- 2.5 × 10 -10 S.N -1.m -2 for tensile strain and +9.5+/-3.5 × 10 -10 S.N -1 .m -2 for compressive strain. For mesa-isolated structures, the coefficients were smaller due to the reduced effect of the AlGaN strain, with values of 5.5 +/- 1.1 × 10 -13 S.N -1.m -2 for tensile strain and 4.8 × 10 -13 S.N -1 .m -2 for compressive strain. The large changes in conductance demonstrate that simple AlGaN/GaN heterostructures are promising for pressure and strain sensor applications.

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