Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

B. S. Kang, S. Kim, J. Kim, F. Ren, K. Baik, S. J. Pearton, B. P. Gila, C. R. Abernathy, C. C. Pan, G. T. Chen, J. I. Chyi, V. Chandrasekaran, M. Sheplak, T. Nishida, S. N.G. Chu

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Abstract

The changes in the conductivity of AlGaN/GaN high electron mobility transistors (HEMT) in response to external strain were investigated. The changes in the conductance were found to roughly linear for a fixed Al mole fraction. An increase in conductivity was observed on applying external tensile strain, while a compressive stress pushed together the GaN atoms reducing the total strain at the interface and the resultant conductivity. The conductance changes of the AlGaN/GaN heterostructures demonstrated their possible application as pressure and strain sensors.

Original languageEnglish
Pages (from-to)4845-4847
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number23
DOIs
Publication statusPublished - 2003 Dec 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kang, B. S., Kim, S., Kim, J., Ren, F., Baik, K., Pearton, S. J., Gila, B. P., Abernathy, C. R., Pan, C. C., Chen, G. T., Chyi, J. I., Chandrasekaran, V., Sheplak, M., Nishida, T., & Chu, S. N. G. (2003). Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 83(23), 4845-4847. https://doi.org/10.1063/1.1631054