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Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors
B. S. Kang, S. Kim, J. Kim, F. Ren, K. Baik, S. J. Pearton, B. P. Gila, C. R. Abernathy, C. C. Pan, G. T. Chen, J. I. Chyi, V. Chandrasekaran, M. Sheplak, T. Nishida, S. N.G. Chu
Research output: Contribution to journal › Article › peer-review
77
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(Scopus)