Effect of fluorine plasma treatment with chemically reduced grapheneoxide thin films as hole transport layer in organic solar cells

Youn Yeol Yu, Byung Hyun Kang, Yang Doo Lee, Sang Bin Lee, Byeong Kwon Ju

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The inorganic materials such as V 2 O 5 , MoO 3 and WO 3 were investigated to replace PEDOT:PSS as hole transport layer (HTL) in organic electronic devices such as organic solar cells (OSCs) and organic lighting emission diodes. However, these methods require vacuum techniques that are long time process and complex. Here, we report about plasma treatment with SF 6 and CF 4 using reactive ion etching on reduced graphene oxide (rGO) thin films that are obtained using an eco-friendly method with vitamin C. Theplasma treated rGO thin films have dipoles since they consist of covalent bonds with fluorine on the surface of rGO. This means it is possible to increase the electrostatic potential energy than bare rGO. Increased potential energy on the surface of rGO films is worth applying organic electronic devices as HTL such as OSCs. Consequently, the power conversion efficiency of OSCs increased more than the rGO films without plasma treatment.

Original languageEnglish
Pages (from-to)91-96
Number of pages6
JournalApplied Surface Science
Volume287
DOIs
Publication statusPublished - 2013

Keywords

  • Graphene oxide
  • Hole transport layer
  • Organic electronics
  • Organic solar cells
  • Plasma treatments

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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