Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

Shihyun Ahn, Fan Ren, Janghyuk Kim, Sooyeoun Oh, Ji Hyun Kim, Michael A. Mastro, S. J. Pearton

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69 Citations (Scopus)

Abstract

Field effect transistors (FETs) using SiO2 and Al2O3 as the gate oxides for the back and front sides, respectively, were fabricated on exfoliated two-dimensional (2D) β-Ga2O3 nano-belts transferred to a SiO2/Si substrate. The mechanical exfoliation and transfer process produced nano-belts with smooth surface morphologies and a uniform low defect density interface with the SiO2/Si substrate. The depletion mode nanobelt transistors exhibited better channel modulation with both front and back gates operational compared to either front or back-gating alone. The maximum transconductance was ∼4.4 mS mm−1 with front and back-gating and ∼3.7 mS mm−1 with front-gating only and a maximum drain source current density of 60 mA mm−1 was achieved at a drain-source voltage of 10 V. The FETs had on/off ratios of ∼105 at 25 °C with gate-source current densities of ∼2 × 10−3mA mm−1 at a gate voltage of −30 V. The device characteristics were stable over more than a month for storage in air ambient and the results show the potential of 2D β-Ga2O3 for power nanoelectronics.

Original languageEnglish
Article number062102
JournalApplied Physics Letters
Volume109
Issue number6
DOIs
Publication statusPublished - 2016 Aug 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ahn, S., Ren, F., Kim, J., Oh, S., Kim, J. H., Mastro, M. A., & Pearton, S. J. (2016). Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors. Applied Physics Letters, 109(6), [062102]. https://doi.org/10.1063/1.4960651