Abstract
We demonstrated the 1.55 μm light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 μm is the longest wavelength so far achieved in self-assembled quantum dots grown on Gads substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Pages | 557-560 |
| Number of pages | 4 |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | 14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden Duration: 2002 May 12 → 2002 May 16 |
Other
| Other | 14th Indium Phosphide and Related Materials Conference |
|---|---|
| Country | Sweden |
| City | Stockholm |
| Period | 02/5/12 → 02/5/16 |
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ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE. / Ganapathy, Sasikala; Zhang, X. Q.; Uesugi, K.; Kumano, H.; Suemune, I.; Kim, B. J.; Seong, Tae Yeon.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2002. p. 557-560.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE
AU - Ganapathy, Sasikala
AU - Zhang, X. Q.
AU - Uesugi, K.
AU - Kumano, H.
AU - Suemune, I.
AU - Kim, B. J.
AU - Seong, Tae Yeon
PY - 2002
Y1 - 2002
N2 - We demonstrated the 1.55 μm light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 μm is the longest wavelength so far achieved in self-assembled quantum dots grown on Gads substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.
AB - We demonstrated the 1.55 μm light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 μm is the longest wavelength so far achieved in self-assembled quantum dots grown on Gads substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.
UR - http://www.scopus.com/inward/record.url?scp=0036045724&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036045724&partnerID=8YFLogxK
M3 - Conference contribution
SP - 557
EP - 560
BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ER -