Abstract
We demonstrated the 1.55 μm light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 μm is the longest wavelength so far achieved in self-assembled quantum dots grown on Gads substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.
| Original language | English |
|---|---|
| Pages (from-to) | 557-560 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publication status | Published - 2002 |
| Event | 14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden Duration: 2002 May 12 → 2002 May 16 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Ganapathy, S., Zhang, X. Q., Uesugi, K., Kumano, H., Suemune, I., Kim, B. J., & Seong, T. Y. (2002). Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 557-560.