Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE

Sasikala Ganapathy, X. Q. Zhang, K. Uesugi, H. Kumano, I. Suemune, B. J. Kim, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We demonstrated the 1.55 μm light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 μm is the longest wavelength so far achieved in self-assembled quantum dots grown on Gads substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages557-560
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden
Duration: 2002 May 122002 May 16

Other

Other14th Indium Phosphide and Related Materials Conference
CountrySweden
CityStockholm
Period02/5/1202/5/16

Fingerprint

Semiconductor quantum dots
Coloring Agents
quantum dots
Wavelength
wavelengths
Optical fiber communication
Light emission
light emission
Light sources
telecommunication
Communication systems
light sources
optical fibers
indium arsenide
shift
room temperature
Substrates
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Ganapathy, S., Zhang, X. Q., Uesugi, K., Kumano, H., Suemune, I., Kim, B. J., & Seong, T. Y. (2002). Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 557-560)

Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE. / Ganapathy, Sasikala; Zhang, X. Q.; Uesugi, K.; Kumano, H.; Suemune, I.; Kim, B. J.; Seong, Tae Yeon.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2002. p. 557-560.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ganapathy, S, Zhang, XQ, Uesugi, K, Kumano, H, Suemune, I, Kim, BJ & Seong, TY 2002, Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 557-560, 14th Indium Phosphide and Related Materials Conference, Stockholm, Sweden, 02/5/12.
Ganapathy S, Zhang XQ, Uesugi K, Kumano H, Suemune I, Kim BJ et al. Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2002. p. 557-560
Ganapathy, Sasikala ; Zhang, X. Q. ; Uesugi, K. ; Kumano, H. ; Suemune, I. ; Kim, B. J. ; Seong, Tae Yeon. / Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2002. pp. 557-560
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