Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE

Sasikala Ganapathy; X. Q. Zhang; K. Uesugi; H. Kumano; I. Suemune; B. J. Kim; T. Y. Seong

Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE

Sasikala Ganapathy, X. Q. Zhang, K. Uesugi, H. Kumano, I. Suemune, B. J. Kim, T. Y. Seong

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrated the 1.55 μm light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 μm is the longest wavelength so far achieved in self-assembled quantum dots grown on Gads substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.

Original language	English
Pages (from-to)	557-560
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 2002
Externally published	Yes
Event	14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden Duration: 2002 May 12 → 2002 May 16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{d7501333242a4f689201518774df518f,

title = "Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE",

abstract = "We demonstrated the 1.55 μm light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 μm is the longest wavelength so far achieved in self-assembled quantum dots grown on Gads substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.",

author = "Sasikala Ganapathy and Zhang, {X. Q.} and K. Uesugi and H. Kumano and I. Suemune and Kim, {B. J.} and Seong, {T. Y.}",

year = "2002",

language = "English",

pages = "557--560",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "14th Indium Phosphide and Related Materials Conference ; Conference date: 12-05-2002 Through 16-05-2002",

}

TY - JOUR

T1 - Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE

AU - Ganapathy, Sasikala

AU - Zhang, X. Q.

AU - Uesugi, K.

AU - Kumano, H.

AU - Suemune, I.

AU - Kim, B. J.

AU - Seong, T. Y.

PY - 2002

Y1 - 2002

N2 - We demonstrated the 1.55 μm light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 μm is the longest wavelength so far achieved in self-assembled quantum dots grown on Gads substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.

AB - We demonstrated the 1.55 μm light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 μm is the longest wavelength so far achieved in self-assembled quantum dots grown on Gads substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.

UR - http://www.scopus.com/inward/record.url?scp=0036045724&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036045724

SP - 557

EP - 560

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

T2 - 14th Indium Phosphide and Related Materials Conference

Y2 - 12 May 2002 through 16 May 2002

ER -

Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE

Abstract

ASJC Scopus subject areas

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