Abstract
An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100% Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together.
Original language | English |
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Pages (from-to) | 1584-1589 |
Number of pages | 6 |
Journal | Microelectronic Engineering |
Volume | 85 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2008 Jul |
Keywords
- BaTiO(BTO)
- Cl/Ar plasma modeling
- Dissociation
- Etch mechanism
- Etch rate
- Ionization
- Pt
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering