Abstract
An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100% Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together.
| Original language | English |
|---|---|
| Pages (from-to) | 1584-1589 |
| Number of pages | 6 |
| Journal | Microelectronic Engineering |
| Volume | 85 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2008 Jul 1 |
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Keywords
- BaTiO(BTO)
- Cl/Ar plasma modeling
- Dissociation
- Etch mechanism
- Etch rate
- Ionization
- Pt
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
Cite this
Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma. / Efremov, Alexander; Min, Nam Ki; Kim, Sungihl; Kim, Mansu; Nahm, Sahn; Kwon, Kwang Ho.
In: Microelectronic Engineering, Vol. 85, No. 7, 01.07.2008, p. 1584-1589.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma
AU - Efremov, Alexander
AU - Min, Nam Ki
AU - Kim, Sungihl
AU - Kim, Mansu
AU - Nahm, Sahn
AU - Kwon, Kwang Ho
PY - 2008/7/1
Y1 - 2008/7/1
N2 - An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100% Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together.
AB - An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100% Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together.
KW - BaTiO(BTO)
KW - Cl/Ar plasma modeling
KW - Dissociation
KW - Etch mechanism
KW - Etch rate
KW - Ionization
KW - Pt
UR - http://www.scopus.com/inward/record.url?scp=46549089695&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46549089695&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2008.03.003
DO - 10.1016/j.mee.2008.03.003
M3 - Article
AN - SCOPUS:46549089695
VL - 85
SP - 1584
EP - 1589
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 7
ER -