Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma

Alexander Efremov, Nam Ki Min, Sungihl Kim, Mansu Kim, Sahn Nahm, Kwang Ho Kwon

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100% Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together.

Original languageEnglish
Pages (from-to)1584-1589
Number of pages6
JournalMicroelectronic Engineering
Volume85
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

Fingerprint

Inductively coupled plasma
mixing ratios
Gases
Ions
Fluxes
Plasmas
Plasma diagnostics
Langmuir probes
Thin films
thin films
Reaction products
gases
Reaction rates
Sputtering
Desorption
Kinetics
electrostatic probes
Chemical analysis
reaction products
gas pressure

Keywords

  • BaTiO(BTO)
  • Cl/Ar plasma modeling
  • Dissociation
  • Etch mechanism
  • Etch rate
  • Ionization
  • Pt

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma. / Efremov, Alexander; Min, Nam Ki; Kim, Sungihl; Kim, Mansu; Nahm, Sahn; Kwon, Kwang Ho.

In: Microelectronic Engineering, Vol. 85, No. 7, 01.07.2008, p. 1584-1589.

Research output: Contribution to journalArticle

Efremov, Alexander ; Min, Nam Ki ; Kim, Sungihl ; Kim, Mansu ; Nahm, Sahn ; Kwon, Kwang Ho. / Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma. In: Microelectronic Engineering. 2008 ; Vol. 85, No. 7. pp. 1584-1589.
@article{08206c0767624197a3697e492ad93576,
title = "Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma",
abstract = "An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100{\%} Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together.",
keywords = "BaTiO(BTO), Cl/Ar plasma modeling, Dissociation, Etch mechanism, Etch rate, Ionization, Pt",
author = "Alexander Efremov and Min, {Nam Ki} and Sungihl Kim and Mansu Kim and Sahn Nahm and Kwon, {Kwang Ho}",
year = "2008",
month = "7",
day = "1",
doi = "10.1016/j.mee.2008.03.003",
language = "English",
volume = "85",
pages = "1584--1589",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "7",

}

TY - JOUR

T1 - Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma

AU - Efremov, Alexander

AU - Min, Nam Ki

AU - Kim, Sungihl

AU - Kim, Mansu

AU - Nahm, Sahn

AU - Kwon, Kwang Ho

PY - 2008/7/1

Y1 - 2008/7/1

N2 - An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100% Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together.

AB - An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100% Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together.

KW - BaTiO(BTO)

KW - Cl/Ar plasma modeling

KW - Dissociation

KW - Etch mechanism

KW - Etch rate

KW - Ionization

KW - Pt

UR - http://www.scopus.com/inward/record.url?scp=46549089695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46549089695&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2008.03.003

DO - 10.1016/j.mee.2008.03.003

M3 - Article

AN - SCOPUS:46549089695

VL - 85

SP - 1584

EP - 1589

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 7

ER -