Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors

Hyun Hee Park, Pil Soo Kang, Gyu-Tae Kim, Jeong Sook Ha

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effect of the gate dielectric materials on the device performance of SnO2 nanowire field effect transistors (FETs) was investigated. The usage of Al-doped TiO2 layer with a large dielectric constant, whose atomic layer deposition process was optimized based on a serially connected capacitor model, enhanced the device performance with lower operation voltages compared to those of SiO2 or Al2 O3 film in an accumulated channel. The higher dielectric constant is attributed to give a lower threshold voltage and a smaller subthreshold slope, which will be useful for the low voltage operation of the nanowire FETs.

Original languageEnglish
Article number102908
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
Publication statusPublished - 2010 Mar 26

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low voltage
nanowires
field effect transistors
permittivity
atomic layer epitaxy
threshold voltage
capacitors
slopes
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors. / Park, Hyun Hee; Kang, Pil Soo; Kim, Gyu-Tae; Ha, Jeong Sook.

In: Applied Physics Letters, Vol. 96, No. 10, 102908, 26.03.2010.

Research output: Contribution to journalArticle

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