Effect of gate dielectrics on the device performance of SnO₂ nanowire field effect transistors

The effect of the gate dielectric materials on the device performance of SnO₂ nanowire field effect transistors (FETs) was investigated. The usage of Al-doped TiO₂ layer with a large dielectric constant, whose atomic layer deposition process was optimized based on a serially connected capacitor model, enhanced the device performance with lower operation voltages compared to those of SiO₂ or Al₂ O₃ film in an accumulated channel. The higher dielectric constant is attributed to give a lower threshold voltage and a smaller subthreshold slope, which will be useful for the low voltage operation of the nanowire FETs.