Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

Dong Joon Kim, Yong Tae Moon, Keun Man Song, In Hwan Lee, Seong Ju Park

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The InGaN thin films were grown by varying the growth pressures, while maintaining all other growth parameters constant. Photoluminescence and high resolution x-ray diffraction (XRD) measurements showed that the In incorporation in the InGaN thin film was drastically increased with decreasing growth pressures. XRD analysis also revealed that the In concentration in the films was increased by 7.5% as the growth pressure was decreased from 250 torr to 150 torr. This can be attributed to the enhanced mass transportation of precursor gases through the boundary-layer on the substrate in the MOCVD system.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalJournal of Electronic Materials
Issue number2
Publication statusPublished - 2001 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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