Effect of growth temperature and quantum structure on inAs/GaAs quantum dot solar cell

M. H. Park, H. S. Kim, S. J. Park, J. D. Song, S. H. Kim, Y. J. Lee, W. J. Choi, Jung ho Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

InGaAs-capped InAs quantum dots (QDs) and InAs QDs were adopted for the study of the effects through growth temperature and the band structure of InAs QDs on the performance of GaAs-based QD solar cell. It has been shown that the defects due to low temperature growth resulted in the decrease of V OC, JSC and external quantum efficiency for GaAs bulk solar cell and QD embedded solar cells. It has been also found that InAs QDs act as defects by trapping photo-generated carries which affect the carrier transport in QD solar cell. The QD solar cell with InGaAs-capped InAs QDs showed higher performance than the QD solar cell with only InAs QDs. Such result has been explained by photo-generated carrier trapping and tunneling through InGaAs QW state in InGaAscapped InAs QDs.

Original languageEnglish
Pages (from-to)2955-2959
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number4
DOIs
Publication statusPublished - 2014 Apr 1

Fingerprint

Quantum Dots
Growth temperature
Semiconductor quantum dots
Solar cells
solar cells
quantum dots
Temperature
Growth
temperature
gallium arsenide
indium arsenide
trapping
Defects
Carrier transport
defects
Quantum efficiency
Band structure
quantum efficiency

Keywords

  • High Temperature Growth
  • Ingaas-Capped
  • Quantum Dots
  • Solar Cell

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Effect of growth temperature and quantum structure on inAs/GaAs quantum dot solar cell. / Park, M. H.; Kim, H. S.; Park, S. J.; Song, J. D.; Kim, S. H.; Lee, Y. J.; Choi, W. J.; Park, Jung ho.

In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 4, 01.04.2014, p. 2955-2959.

Research output: Contribution to journalArticle

Park, M. H. ; Kim, H. S. ; Park, S. J. ; Song, J. D. ; Kim, S. H. ; Lee, Y. J. ; Choi, W. J. ; Park, Jung ho. / Effect of growth temperature and quantum structure on inAs/GaAs quantum dot solar cell. In: Journal of Nanoscience and Nanotechnology. 2014 ; Vol. 14, No. 4. pp. 2955-2959.
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