Effect of growth temperature on the characteristics of ZnO films grown on Si(111) substrates by metal-organic chemical vapor deposition

Junjie Zhu, Ran Yao, Haiyan Song, Zhuxi Fu, A. Yu Kuznetsov, In-Hwan Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

ZnO films have been grown on Si(111) substrates by metal-organic chemical vapor deposition using diethylzinc and C O2 as precursors. The effects of growth temperature on growth rate, structure, and optical properties of the ZnO films were investigated in a temperature range between 450 and 700 °C. As growth temperature increased, the growth mode changed from kinetics-limited to mass-transfer-limited, and finally, to desorption-limited mode. Using the Arrhenius equation, the activation energy for the kinetics-limited growth mode was estimated to be 105 meV. The crystalline quality was also strongly dependent on growth temperature. With increasing growth temperature, the width of x-ray diffraction peaks decreases and the photoluminescence intensity enhances. Using C O2 as the oxygen source, we found that the optimal growth temperature was near 600 °C.

Original languageEnglish
Pages (from-to)224-227
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume26
Issue number2
DOIs
Publication statusPublished - 2008 Mar 10
Externally publishedYes

Fingerprint

Organic Chemicals
Organic chemicals
Growth temperature
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
Substrates
temperature
Kinetics
Desorption
Photoluminescence
Mass transfer
Optical properties
Activation energy
Diffraction
Oxygen
kinetics
Crystalline materials
X rays
mass transfer

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Effect of growth temperature on the characteristics of ZnO films grown on Si(111) substrates by metal-organic chemical vapor deposition. / Zhu, Junjie; Yao, Ran; Song, Haiyan; Fu, Zhuxi; Kuznetsov, A. Yu; Lee, In-Hwan.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 26, No. 2, 10.03.2008, p. 224-227.

Research output: Contribution to journalArticle

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