Effect of growth temperature on the characteristics of ZnO films grown on Si(111) substrates by metal-organic chemical vapor deposition

Junjie Zhu, Ran Yao, Haiyan Song, Zhuxi Fu, A. Yu Kuznetsov, In Hwan Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

ZnO films have been grown on Si(111) substrates by metal-organic chemical vapor deposition using diethylzinc and C O2 as precursors. The effects of growth temperature on growth rate, structure, and optical properties of the ZnO films were investigated in a temperature range between 450 and 700 °C. As growth temperature increased, the growth mode changed from kinetics-limited to mass-transfer-limited, and finally, to desorption-limited mode. Using the Arrhenius equation, the activation energy for the kinetics-limited growth mode was estimated to be 105 meV. The crystalline quality was also strongly dependent on growth temperature. With increasing growth temperature, the width of x-ray diffraction peaks decreases and the photoluminescence intensity enhances. Using C O2 as the oxygen source, we found that the optimal growth temperature was near 600 °C.

Original languageEnglish
Pages (from-to)224-227
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume26
Issue number2
DOIs
Publication statusPublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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