Effect of growth temperature on the properties of hydrogenated Al-doped ZnO films

Sung Ju Tark, Min Gu Kang, Hee Jin Lim, Donghwan Kim, Seung Hoon Lee, Won Mok Kim

Research output: Contribution to journalArticle

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Abstract

This study examined the effect of deposition temperature on the electrical and the optical properties of thin-film hydrogenated zinc oxide doped with aluminum (AZO:H) fabricated by radio frequency magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO:H films were prepared on glass over a substrate temperature range from room temperature to 250 °C. The intentional incorporation of hydrogen was shown to play an important role in the electrical properties of the AZO:H films by increasing the free carrier concentration. The addition of 2 % H2 in Ar at a growth temperature of 150 °C produced an AZO:H film with excellent electrical properties and a resistivity of 3.21 × 10-4 Ω·cm. The UV-measurements showed that the optical transmission of the AZO:H films was above 86 % in the visible range with a wide optical band gap.

Original languageEnglish
Pages (from-to)282-287
Number of pages6
JournalJournal of the Korean Physical Society
Volume53
Issue number1
Publication statusPublished - 2008 Jul 1

Keywords

  • Al-doped ZnO
  • Hydrogenated
  • Rf magnetron sputter
  • TCO

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Tark, S. J., Kang, M. G., Lim, H. J., Kim, D., Lee, S. H., & Kim, W. M. (2008). Effect of growth temperature on the properties of hydrogenated Al-doped ZnO films. Journal of the Korean Physical Society, 53(1), 282-287.