Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process

Jun Young Choi; Sang Sig Kim; Sang Yeol Lee

doi:10.1063/1.3669700

Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process

Jun Young Choi, Sang Sig Kim, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

The feasibility of controlling the threshold voltage (V _th) and field effect mobility (μ _FE) has been studied by adjusting hafnium ratio. Hafnium zinc tin oxide (HZTO) thin films were fabricated with various hafnium ratios. V _th shifted toward positive direction, and the μ _FE was decreased due to the decrease of carrier concentration, because hafnium acts as carrier suppressor. The subthreshold swing exhibits good properties from 1.01 to 0.44. The decrease of carrier concentration in HZTO is closely related with the decrease of the number of oxygen by hafnium ion.

Original language	English
Article number	022109
Journal	Applied Physics Letters
Volume	100
Issue number	2
DOIs	https://doi.org/10.1063/1.3669700
Publication status	Published - 2012 Jan 9

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The feasibility of controlling the threshold voltage (V th) and field effect mobility (μ FE) has been studied by adjusting hafnium ratio. Hafnium zinc tin oxide (HZTO) thin films were fabricated with various hafnium ratios. V th shifted toward positive direction, and the μ FE was decreased due to the decrease of carrier concentration, because hafnium acts as carrier suppressor. The subthreshold swing exhibits good properties from 1.01 to 0.44. The decrease of carrier concentration in HZTO is closely related with the decrease of the number of oxygen by hafnium ion.",

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Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process

Abstract

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