Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process

Jun Young Choi, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The feasibility of controlling the threshold voltage (V th) and field effect mobility (μ FE) has been studied by adjusting hafnium ratio. Hafnium zinc tin oxide (HZTO) thin films were fabricated with various hafnium ratios. V th shifted toward positive direction, and the μ FE was decreased due to the decrease of carrier concentration, because hafnium acts as carrier suppressor. The subthreshold swing exhibits good properties from 1.01 to 0.44. The decrease of carrier concentration in HZTO is closely related with the decrease of the number of oxygen by hafnium ion.

Original languageEnglish
Article number022109
JournalApplied Physics Letters
Volume100
Issue number2
DOIs
Publication statusPublished - 2012 Jan 9

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hafnium
transistors
thin films
zinc oxides
tin oxides
suppressors
threshold voltage
adjusting
oxygen
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process. / Young Choi, Jun; Kim, Sangsig; Yeol Lee, Sang.

In: Applied Physics Letters, Vol. 100, No. 2, 022109, 09.01.2012.

Research output: Contribution to journalArticle

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