TY - JOUR
T1 - Effect of heat treatment of spin-cast solar silicon sheet on crystalline defects
AU - Kim, Hyunhui
AU - Lee, Jaewoo
AU - Lee, Changbum
AU - Kim, Joonsoo
AU - Jang, Bo Yun
AU - Lee, Jinseok
AU - Yoon, Wooyoung
PY - 2013/7/20
Y1 - 2013/7/20
N2 - Silicon sheets were fabricated via spin-casting, which is a ribbon manufacturing method for photovoltaics. Although the advantages of spin-casting include rapid processing and mass production with no silicon loss, crystalline defects such as random grain boundaries (GBs), sub-GBs, or dislocations are generated from rapid solidification. These defects are an important factor in the decreased conversion efficiency of solar cells. Spin-cast sheets were annealed at 950 °C, 1200 °C, and 1350 °C for 2 h to eliminate defects and to increase the grain size. The effect of thermal processing on the sheets was analyzed by comparing them with as-cast sheets and investigated by electron backscattered diffraction, photoluminescence, and etch-pit density. It was confirmed that sub-GBs were almost completely assimilated with neighboring grains with the 1350 °C heat treatment. Suppression of dislocations was observed through the decrease in the D-band peak with low-temperature photoluminescence (PL, 10 K), and few dislocation clusters were observed from the Secco-etched sheet annealed at 1350 °C.
AB - Silicon sheets were fabricated via spin-casting, which is a ribbon manufacturing method for photovoltaics. Although the advantages of spin-casting include rapid processing and mass production with no silicon loss, crystalline defects such as random grain boundaries (GBs), sub-GBs, or dislocations are generated from rapid solidification. These defects are an important factor in the decreased conversion efficiency of solar cells. Spin-cast sheets were annealed at 950 °C, 1200 °C, and 1350 °C for 2 h to eliminate defects and to increase the grain size. The effect of thermal processing on the sheets was analyzed by comparing them with as-cast sheets and investigated by electron backscattered diffraction, photoluminescence, and etch-pit density. It was confirmed that sub-GBs were almost completely assimilated with neighboring grains with the 1350 °C heat treatment. Suppression of dislocations was observed through the decrease in the D-band peak with low-temperature photoluminescence (PL, 10 K), and few dislocation clusters were observed from the Secco-etched sheet annealed at 1350 °C.
KW - Defects
KW - Heat treatment
KW - Low-temperature photoluminescence
KW - Silicon ribbon
KW - Spin-casting
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U2 - 10.1016/j.cap.2013.01.015
DO - 10.1016/j.cap.2013.01.015
M3 - Article
AN - SCOPUS:84890569648
VL - 13
SP - S88-S92
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 4 SUPPL.2
ER -