Abstract
Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.
| Original language | English |
|---|---|
| Pages (from-to) | S98-S102 |
| Journal | Current Applied Physics |
| Volume | 14 |
| Issue number | SUPPL. 1 |
| DOIs | |
| Publication status | Published - 2014 Mar 14 |
Keywords
- AlGaN/GaN Schottky barrier diode
- Mobility degradation
- Pulse mode measurement
- Self-heating effect
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
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Woo, H., Jo, Y., Kim, J., Roh, C., Lee, J., Kim, H., Im, H., Hahn, C. K., & Park, J. (2014). Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate. Current Applied Physics, 14(SUPPL. 1), S98-S102. https://doi.org/10.1016/j.cap.2013.11.015