Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate

Hyeonseok Woo, Yongcheol Jo, Jongmin Kim, Cheonghyun Roh, Junho Lee, H. Kim, H. Im, Cheol Koo Hahn, Jungho Park

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.

Original languageEnglish
Pages (from-to)S98-S102
JournalCurrent Applied Physics
Volume14
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2014 Mar 14

Keywords

  • AlGaN/GaN Schottky barrier diode
  • Mobility degradation
  • Pulse mode measurement
  • Self-heating effect

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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