TY - JOUR
T1 - Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate
AU - Woo, Hyeonseok
AU - Jo, Yongcheol
AU - Kim, Jongmin
AU - Roh, Cheonghyun
AU - Lee, Junho
AU - Kim, H.
AU - Im, H.
AU - Hahn, Cheol Koo
AU - Park, Jungho
N1 - Funding Information:
This work was supported by the “Power generation of Electricity Delivery” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government Ministry of Knowledge Economy (No. 201110150017B ) and Seoul R&BD Program ( WR080951 ).
PY - 2014/3/14
Y1 - 2014/3/14
N2 - Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.
AB - Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.
KW - AlGaN/GaN Schottky barrier diode
KW - Mobility degradation
KW - Pulse mode measurement
KW - Self-heating effect
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U2 - 10.1016/j.cap.2013.11.015
DO - 10.1016/j.cap.2013.11.015
M3 - Article
AN - SCOPUS:84899458764
VL - 14
SP - S98-S102
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - SUPPL. 1
ER -