Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate

Hyeonseok Woo; Yongcheol Jo; Jongmin Kim; Cheonghyun Roh; Junho Lee; H. Kim; H. Im; Cheol Koo Hahn; Jungho Park

doi:10.1016/j.cap.2013.11.015

Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate

Hyeonseok Woo, Yongcheol Jo, Jongmin Kim, Cheonghyun Roh, Junho Lee, H. Kim, H. Im, Cheol Koo Hahn, Jungho Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.

Original language	English
Pages (from-to)	S98-S102
Journal	Current Applied Physics
Volume	14
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2013.11.015
Publication status	Published - 2014 Mar 14

Keywords

AlGaN/GaN Schottky barrier diode
Mobility degradation
Pulse mode measurement
Self-heating effect

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2013.11.015

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title = "Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate",

abstract = "Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.",

keywords = "AlGaN/GaN Schottky barrier diode, Mobility degradation, Pulse mode measurement, Self-heating effect",

author = "Hyeonseok Woo and Yongcheol Jo and Jongmin Kim and Cheonghyun Roh and Junho Lee and H. Kim and H. Im and Hahn, {Cheol Koo} and Jungho Park",

year = "2014",

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T1 - Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate

AU - Woo, Hyeonseok

AU - Jo, Yongcheol

AU - Kim, Jongmin

AU - Roh, Cheonghyun

AU - Lee, Junho

AU - Kim, H.

AU - Im, H.

AU - Hahn, Cheol Koo

AU - Park, Jungho

PY - 2014/3/14

Y1 - 2014/3/14

N2 - Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.

AB - Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.

KW - AlGaN/GaN Schottky barrier diode

KW - Mobility degradation

KW - Pulse mode measurement

KW - Self-heating effect

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