Abstract
Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.
| Original language | English |
|---|---|
| Journal | Current Applied Physics |
| Volume | 14 |
| Issue number | SUPPL. 1 |
| DOIs | |
| Publication status | Published - 2014 Mar 14 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate. / Woo, Hyeonseok; Jo, Yongcheol; Kim, Jongmin; Roh, Cheonghyun; Lee, Junho; Kim, H.; Im, H.; Hahn, Cheol Koo; Park, Jung ho.
In: Current Applied Physics, Vol. 14, No. SUPPL. 1, 14.03.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate
AU - Woo, Hyeonseok
AU - Jo, Yongcheol
AU - Kim, Jongmin
AU - Roh, Cheonghyun
AU - Lee, Junho
AU - Kim, H.
AU - Im, H.
AU - Hahn, Cheol Koo
AU - Park, Jung ho
PY - 2014/3/14
Y1 - 2014/3/14
N2 - Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.
AB - Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.
KW - AlGaN/GaN Schottky barrier diode
KW - Mobility degradation
KW - Pulse mode measurement
KW - Self-heating effect
UR - http://www.scopus.com/inward/record.url?scp=84899458764&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84899458764&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2013.11.015
DO - 10.1016/j.cap.2013.11.015
M3 - Article
VL - 14
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - SUPPL. 1
ER -