Effect of heating rate on the refining of metallurgical-grade silicon during fractional melting

Juho Chung, Changbum Lee, Wooyoung Yoon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Silicon was purified using fractional melting (FM), which is a more effective refining method than fractional solidification. Changes in the silicon microstructure during FM were observed using a scanning electron microscope (SEM) and an electron probe microanalyzer (EPMA). Purity of each sample was investigated using inductively coupled plasma atomic emission spectrometry (ICP-AES) to determine the effects of various heating rates on the efficiency of FM. A refining ratio of 97.28% was the best result that could be obtained for the sample that was heated at a rate of 15 °C/min. For the samples that were heated below 1390 °C lower heating rate resulted in higher refining efficiency. Acid-leaching yielded 99.98% pure silicon samples after FM.

Original languageEnglish
Article number10MB04
JournalJapanese Journal of Applied Physics
Volume52
Issue number10 PART2
DOIs
Publication statusPublished - 2013 Nov 11

Fingerprint

refining
Heating rate
Refining
grade
Melting
melting
Silicon
heating
silicon
Inductively coupled plasma
electron probes
leaching
Spectrometry
solidification
Leaching
Solidification
purity
Electron microscopes
electron microscopes
Scanning

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effect of heating rate on the refining of metallurgical-grade silicon during fractional melting. / Chung, Juho; Lee, Changbum; Yoon, Wooyoung.

In: Japanese Journal of Applied Physics, Vol. 52, No. 10 PART2, 10MB04, 11.11.2013.

Research output: Contribution to journalArticle

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