Effect of heating rate on the refining of metallurgical-grade silicon during fractional melting

Juho Chung, Changbum Lee, Wooyoung Yoon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Silicon was purified using fractional melting (FM), which is a more effective refining method than fractional solidification. Changes in the silicon microstructure during FM were observed using a scanning electron microscope (SEM) and an electron probe microanalyzer (EPMA). Purity of each sample was investigated using inductively coupled plasma atomic emission spectrometry (ICP-AES) to determine the effects of various heating rates on the efficiency of FM. A refining ratio of 97.28% was the best result that could be obtained for the sample that was heated at a rate of 15 °C/min. For the samples that were heated below 1390 °C lower heating rate resulted in higher refining efficiency. Acid-leaching yielded 99.98% pure silicon samples after FM.

Original languageEnglish
Article number10MB04
JournalJapanese journal of applied physics
Volume52
Issue number10 PART2
DOIs
Publication statusPublished - 2013

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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