We have studied the effect of in-situ phosphorus doping on Si1-xGex films with a high Ge fraction grown on silicon substrates at 550 °C by using low-pressure chemical-vapor deposition. In a low PHs partial pressure region, such as below 1.25×10-3 Pa, both the phosphorus and the carrier concentrations increased with increasing PH3 pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased while the Ge fraction increased. Moreover, the deposition rate and the Ge fraction increased with increasing GeH4 partial pressure while the phosphorus and carrier concentrations decreased. Si1-xGex epitaxial growth is largely controlled by the surface coverage effect of phosphorus in a higher PH3 partial pressure region, but it is controlled the Langmuir-adsorption-type kinetics in a lower pressure region.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Issue number||5 Part 1|
|Publication status||Published - 2000 Nov 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)