Effect of heavy in-situ phosphorus doping on Si1-xGex epitaxial growth by low-pressure chemical-vapor deposition

Cheol Jin Lee, Byung Don Min, Seong Jeen Kim

Research output: Contribution to journalArticle

Abstract

We have studied the effect of in-situ phosphorus doping on Si1-xGex films with a high Ge fraction grown on silicon substrates at 550 °C by using low-pressure chemical-vapor deposition. In a low PHs partial pressure region, such as below 1.25×10-3 Pa, both the phosphorus and the carrier concentrations increased with increasing PH3 pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased while the Ge fraction increased. Moreover, the deposition rate and the Ge fraction increased with increasing GeH4 partial pressure while the phosphorus and carrier concentrations decreased. Si1-xGex epitaxial growth is largely controlled by the surface coverage effect of phosphorus in a higher PH3 partial pressure region, but it is controlled the Langmuir-adsorption-type kinetics in a lower pressure region.

Original languageEnglish
Pages (from-to)527-530
Number of pages4
JournalJournal of the Korean Physical Society
Volume37
Issue number5 Part 1
Publication statusPublished - 2000 Nov 1
Externally publishedYes

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phosphorus
low pressure
vapor deposition
partial pressure
adsorption
kinetics
silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Effect of heavy in-situ phosphorus doping on Si1-xGex epitaxial growth by low-pressure chemical-vapor deposition. / Lee, Cheol Jin; Min, Byung Don; Kim, Seong Jeen.

In: Journal of the Korean Physical Society, Vol. 37, No. 5 Part 1, 01.11.2000, p. 527-530.

Research output: Contribution to journalArticle

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