Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs

B. Luo, Jihyun Kim, F. Ren, A. G. Baca, R. D. Briggs, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins

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11 Citations (Scopus)

Abstract

MgO or Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons at a dose equivalent to ∼10 years in low-earth orbit. Very little change in drain-source current, transconductance, or diode ideality factor was observed under these conditions, but the reverse breakdown increased due to a decrease in channel electron density. In addition, no significant change was observed in the drain-source current under pulsed conditions, indicating that the proton irradiation did not alter the effectiveness of the MgO and Sc2O3 in passivating surface states.

Original languageEnglish
Pages (from-to)G31-G33
JournalElectrochemical and Solid-State Letters
Volume6
Issue number3
DOIs
Publication statusPublished - 2003 Mar
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Luo, B., Kim, J., Ren, F., Baca, A. G., Briggs, R. D., Gila, B. P., Onstine, A. H., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., & Wilkins, R. (2003). Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs. Electrochemical and Solid-State Letters, 6(3), G31-G33. https://doi.org/10.1149/1.1540791