MgO or Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons at a dose equivalent to ∼10 years in low-earth orbit. Very little change in drain-source current, transconductance, or diode ideality factor was observed under these conditions, but the reverse breakdown increased due to a decrease in channel electron density. In addition, no significant change was observed in the drain-source current under pulsed conditions, indicating that the proton irradiation did not alter the effectiveness of the MgO and Sc2O3 in passivating surface states.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2003 Mar|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering