Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs

B. Luo, Ji Hyun Kim, F. Ren, A. G. Baca, R. D. Briggs, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

MgO or Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons at a dose equivalent to ∼10 years in low-earth orbit. Very little change in drain-source current, transconductance, or diode ideality factor was observed under these conditions, but the reverse breakdown increased due to a decrease in channel electron density. In addition, no significant change was observed in the drain-source current under pulsed conditions, indicating that the proton irradiation did not alter the effectiveness of the MgO and Sc2O3 in passivating surface states.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume6
Issue number3
DOIs
Publication statusPublished - 2003 Mar 1
Externally publishedYes

Fingerprint

Proton irradiation
proton irradiation
Transconductance
Surface states
High electron mobility transistors
high electron mobility transistors
Carrier concentration
Protons
Diodes
Orbits
direct current
Earth (planet)
low Earth orbits
transconductance
breakdown
diodes
dosage
protons
energy
aluminum gallium nitride

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs. / Luo, B.; Kim, Ji Hyun; Ren, F.; Baca, A. G.; Briggs, R. D.; Gila, B. P.; Onstine, A. H.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R.

In: Electrochemical and Solid-State Letters, Vol. 6, No. 3, 01.03.2003.

Research output: Contribution to journalArticle

Luo, B, Kim, JH, Ren, F, Baca, AG, Briggs, RD, Gila, BP, Onstine, AH, Allums, KK, Abernathy, CR, Pearton, SJ, Dwivedi, R, Fogarty, TN & Wilkins, R 2003, 'Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs', Electrochemical and Solid-State Letters, vol. 6, no. 3. https://doi.org/10.1149/1.1540791
Luo, B. ; Kim, Ji Hyun ; Ren, F. ; Baca, A. G. ; Briggs, R. D. ; Gila, B. P. ; Onstine, A. H. ; Allums, K. K. ; Abernathy, C. R. ; Pearton, S. J. ; Dwivedi, R. ; Fogarty, T. N. ; Wilkins, R. / Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs. In: Electrochemical and Solid-State Letters. 2003 ; Vol. 6, No. 3.
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AU - Baca, A. G.

AU - Briggs, R. D.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Allums, K. K.

AU - Abernathy, C. R.

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AU - Dwivedi, R.

AU - Fogarty, T. N.

AU - Wilkins, R.

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