Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs

B. Luo; Jihyun Kim; F. Ren; A. G. Baca; R. D. Briggs; B. P. Gila; A. H. Onstine; K. K. Allums; C. R. Abernathy; S. J. Pearton; R. Dwivedi; T. N. Fogarty; R. Wilkins

doi:10.1149/1.1540791

Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc₂O₃ passivated AlGaN/GaN HEMTs

B. Luo, Jihyun Kim, F. Ren, A. G. Baca, R. D. Briggs, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins

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14 Citations (Scopus)

Abstract

MgO or Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons at a dose equivalent to ∼10 years in low-earth orbit. Very little change in drain-source current, transconductance, or diode ideality factor was observed under these conditions, but the reverse breakdown increased due to a decrease in channel electron density. In addition, no significant change was observed in the drain-source current under pulsed conditions, indicating that the proton irradiation did not alter the effectiveness of the MgO and Sc₂O₃ in passivating surface states.

Original language	English
Pages (from-to)	G31-G33
Journal	Electrochemical and Solid-State Letters
Volume	6
Issue number	3
DOIs	https://doi.org/10.1149/1.1540791
Publication status	Published - 2003 Mar
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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Luo, B., Kim, J., Ren, F., Baca, A. G., Briggs, R. D., Gila, B. P., Onstine, A. H., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., & Wilkins, R. (2003). Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc₂O₃ passivated AlGaN/GaN HEMTs. Electrochemical and Solid-State Letters, 6(3), G31-G33. https://doi.org/10.1149/1.1540791

Luo, B, Kim, J, Ren, F, Baca, AG, Briggs, RD, Gila, BP, Onstine, AH, Allums, KK, Abernathy, CR, Pearton, SJ, Dwivedi, R, Fogarty, TN & Wilkins, R 2003, 'Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc₂O₃ passivated AlGaN/GaN HEMTs', Electrochemical and Solid-State Letters, vol. 6, no. 3, pp. G31-G33. https://doi.org/10.1149/1.1540791

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title = "Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs",

abstract = "MgO or Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons at a dose equivalent to ∼10 years in low-earth orbit. Very little change in drain-source current, transconductance, or diode ideality factor was observed under these conditions, but the reverse breakdown increased due to a decrease in channel electron density. In addition, no significant change was observed in the drain-source current under pulsed conditions, indicating that the proton irradiation did not alter the effectiveness of the MgO and Sc2O3 in passivating surface states.",

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year = "2003",

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doi = "10.1149/1.1540791",

language = "English",

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T1 - Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs

AU - Luo, B.

AU - Kim, Jihyun

AU - Ren, F.

AU - Baca, A. G.

AU - Briggs, R. D.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Allums, K. K.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Dwivedi, R.

AU - Fogarty, T. N.

AU - Wilkins, R.

PY - 2003/3

Y1 - 2003/3

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AB - MgO or Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons at a dose equivalent to ∼10 years in low-earth orbit. Very little change in drain-source current, transconductance, or diode ideality factor was observed under these conditions, but the reverse breakdown increased due to a decrease in channel electron density. In addition, no significant change was observed in the drain-source current under pulsed conditions, indicating that the proton irradiation did not alter the effectiveness of the MgO and Sc2O3 in passivating surface states.

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Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc₂O₃ passivated AlGaN/GaN HEMTs

Abstract

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