Effect of high-temperature annealing on ion-implanted silicon solar cells

Hyunpil Boo, Jong Han Lee, Min Gu Kang, Kyungdong Lee, Seongtak Kim, Hae Chul Hwang, Wook Jung Hwang, Hee Oh Kang, Sungeun Park, Sung Ju Tark, Donghwan Kim

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050°C for 30∼90min for activation. Boron emitters were activated at 1000°C or higher, while phosphorus emitters were activated at 950°C. QSSPC measurements show that the implied V oc of boron emitters increases about 15mV and the J 01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied V oc decreases from 622mV to 560mV and the J 01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178μs to 14μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δη abs =-1.3%), while, for n-type implanted solar cells, deep junction annealing increases the efficiency and V oc, especially (Δη abs =+0.4%) for backside emitter solar cells.

Original languageEnglish
Article number921908
JournalInternational Journal of Photoenergy
Publication statusPublished - 2012

ASJC Scopus subject areas

  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)


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