Abstract
P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050°C for 30∼90min for activation. Boron emitters were activated at 1000°C or higher, while phosphorus emitters were activated at 950°C. QSSPC measurements show that the implied V oc of boron emitters increases about 15mV and the J 01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied V oc decreases from 622mV to 560mV and the J 01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178μs to 14μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δη abs =-1.3%), while, for n-type implanted solar cells, deep junction annealing increases the efficiency and V oc, especially (Δη abs =+0.4%) for backside emitter solar cells.
| Original language | English |
|---|---|
| Article number | 921908 |
| Journal | International Journal of Photoenergy |
| Volume | 2012 |
| DOIs | |
| Publication status | Published - 2012 Apr 19 |
Fingerprint
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Chemistry(all)
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
Cite this
Effect of high-temperature annealing on ion-implanted silicon solar cells. / Boo, Hyunpil; Lee, Jong Han; Kang, Min Gu; Lee, Kyungdong; Kim, Seongtak; Hwang, Hae Chul; Hwang, Wook Jung; Kang, Hee Oh; Park, Sungeun; Tark, Sung Ju; Kim, Donghwan.
In: International Journal of Photoenergy, Vol. 2012, 921908, 19.04.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of high-temperature annealing on ion-implanted silicon solar cells
AU - Boo, Hyunpil
AU - Lee, Jong Han
AU - Kang, Min Gu
AU - Lee, Kyungdong
AU - Kim, Seongtak
AU - Hwang, Hae Chul
AU - Hwang, Wook Jung
AU - Kang, Hee Oh
AU - Park, Sungeun
AU - Tark, Sung Ju
AU - Kim, Donghwan
PY - 2012/4/19
Y1 - 2012/4/19
N2 - P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050°C for 30∼90min for activation. Boron emitters were activated at 1000°C or higher, while phosphorus emitters were activated at 950°C. QSSPC measurements show that the implied V oc of boron emitters increases about 15mV and the J 01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied V oc decreases from 622mV to 560mV and the J 01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178μs to 14μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δη abs =-1.3%), while, for n-type implanted solar cells, deep junction annealing increases the efficiency and V oc, especially (Δη abs =+0.4%) for backside emitter solar cells.
AB - P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050°C for 30∼90min for activation. Boron emitters were activated at 1000°C or higher, while phosphorus emitters were activated at 950°C. QSSPC measurements show that the implied V oc of boron emitters increases about 15mV and the J 01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied V oc decreases from 622mV to 560mV and the J 01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178μs to 14μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δη abs =-1.3%), while, for n-type implanted solar cells, deep junction annealing increases the efficiency and V oc, especially (Δη abs =+0.4%) for backside emitter solar cells.
UR - http://www.scopus.com/inward/record.url?scp=84859759023&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84859759023&partnerID=8YFLogxK
U2 - 10.1155/2012/921908
DO - 10.1155/2012/921908
M3 - Article
AN - SCOPUS:84859759023
VL - 2012
JO - International Journal of Photoenergy
JF - International Journal of Photoenergy
SN - 1110-662X
M1 - 921908
ER -