Abstract
The effect of post-deposition H2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity ( ρc) of 3.4 × 10-4 Ω · cm2 was achieved on a moderately doped n-Ge substrate (1 × 1017 cm -3) , whereby 5900× reduction was exhibited from the Ti/n-Ge structure, and a 10× reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.
| Original language | English |
|---|---|
| Article number | 7460191 |
| Pages (from-to) | 709-712 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 37 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2016 Jun 1 |
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Keywords
- Contact resistance
- Fermi-level unpinning
- germanium
- post-deposition hydrogen annealing
- source/drain
- titanium dioxide
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure. / Kim, Gwang Sik; Yoo, Gwangwe; Seo, Yujin; Kim, Seung Hwan; Cho, Karam; Cho, Byung Jin; Shin, Changhwan; Park, Jin Hong; Yu, Hyun-Yong.
In: IEEE Electron Device Letters, Vol. 37, No. 6, 7460191, 01.06.2016, p. 709-712.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure
AU - Kim, Gwang Sik
AU - Yoo, Gwangwe
AU - Seo, Yujin
AU - Kim, Seung Hwan
AU - Cho, Karam
AU - Cho, Byung Jin
AU - Shin, Changhwan
AU - Park, Jin Hong
AU - Yu, Hyun-Yong
PY - 2016/6/1
Y1 - 2016/6/1
N2 - The effect of post-deposition H2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity ( ρc) of 3.4 × 10-4 Ω · cm2 was achieved on a moderately doped n-Ge substrate (1 × 1017 cm -3) , whereby 5900× reduction was exhibited from the Ti/n-Ge structure, and a 10× reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.
AB - The effect of post-deposition H2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity ( ρc) of 3.4 × 10-4 Ω · cm2 was achieved on a moderately doped n-Ge substrate (1 × 1017 cm -3) , whereby 5900× reduction was exhibited from the Ti/n-Ge structure, and a 10× reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.
KW - Contact resistance
KW - Fermi-level unpinning
KW - germanium
KW - post-deposition hydrogen annealing
KW - source/drain
KW - titanium dioxide
UR - http://www.scopus.com/inward/record.url?scp=84971375780&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84971375780&partnerID=8YFLogxK
U2 - 10.1109/LED.2016.2558582
DO - 10.1109/LED.2016.2558582
M3 - Article
AN - SCOPUS:84971375780
VL - 37
SP - 709
EP - 712
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 6
M1 - 7460191
ER -