Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure

Gwang Sik Kim, Gwangwe Yoo, Yujin Seo, Seung Hwan Kim, Karam Cho, Byung Jin Cho, Changhwan Shin, Jin Hong Park, Hyun-Yong Yu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The effect of post-deposition H2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity ( ρc) of 3.4 × 10-4 Ω · cm2 was achieved on a moderately doped n-Ge substrate (1 × 1017 cm -3) , whereby 5900× reduction was exhibited from the Ti/n-Ge structure, and a 10× reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.

Original languageEnglish
Article number7460191
Pages (from-to)709-712
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number6
DOIs
Publication statusPublished - 2016 Jun 1

Keywords

  • Contact resistance
  • Fermi-level unpinning
  • germanium
  • post-deposition hydrogen annealing
  • source/drain
  • titanium dioxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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