Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure

Gwang Sik Kim; Gwangwe Yoo; Yujin Seo; Seung Hwan Kim; Karam Cho; Byung Jin Cho; Changhwan Shin; Jin Hong Park; Hyun Yong Yu

doi:10.1109/LED.2016.2558582

Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure

Gwang Sik Kim, Gwangwe Yoo, Yujin Seo, Seung Hwan Kim, Karam Cho, Byung Jin Cho, Changhwan Shin, Jin Hong Park, Hyun Yong Yu

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The effect of post-deposition H₂ annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity ( ρc) of 3.4 × 10^-4 Ω · cm² was achieved on a moderately doped n-Ge substrate (1 × 10¹⁷ cm ^-3) , whereby 5900× reduction was exhibited from the Ti/n-Ge structure, and a 10× reduction was achieved from the Ti/Ar plasma-treated TiO_2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.

Original language	English
Article number	7460191
Pages (from-to)	709-712
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	6
DOIs	https://doi.org/10.1109/LED.2016.2558582
Publication status	Published - 2016 Jun

Keywords

Contact resistance
Fermi-level unpinning
germanium
post-deposition hydrogen annealing
source/drain
titanium dioxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure. / Kim, Gwang Sik; Yoo, Gwangwe; Seo, Yujin; Kim, Seung Hwan; Cho, Karam; Cho, Byung Jin; Shin, Changhwan; Park, Jin Hong; Yu, Hyun Yong.

In: IEEE Electron Device Letters, Vol. 37, No. 6, 7460191, 06.2016, p. 709-712.

Research output: Contribution to journal › Article › peer-review

@article{333f2bdf66b9453a8f98d677f9384292,

title = "Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure",

abstract = "The effect of post-deposition H2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity ( ρc) of 3.4 × 10-4 Ω · cm2 was achieved on a moderately doped n-Ge substrate (1 × 1017 cm -3) , whereby 5900× reduction was exhibited from the Ti/n-Ge structure, and a 10× reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.",

keywords = "Contact resistance, Fermi-level unpinning, germanium, post-deposition hydrogen annealing, source/drain, titanium dioxide",

author = "Kim, {Gwang Sik} and Gwangwe Yoo and Yujin Seo and Kim, {Seung Hwan} and Karam Cho and Cho, {Byung Jin} and Changhwan Shin and Park, {Jin Hong} and Yu, {Hyun Yong}",

note = "Funding Information: This work was supported in part by the National Research Foundation of Korea within the Ministry of Science, ICT, and Future Planning through the Basic Science Research Program under Grant 2014R1A1A1036090 and in part by the Technology Innovation Program entitled Technology Development of Ge nMOS/pMOS FinFET for 10nm Technology Node within the Ministry of Trade, Industry & Energy, Korea, under Grant 10048594. The review of this letter was arranged by Editor K. J. Kuhn.",

year = "2016",

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doi = "10.1109/LED.2016.2558582",

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AU - Kim, Seung Hwan

AU - Cho, Karam

AU - Cho, Byung Jin

AU - Shin, Changhwan

AU - Park, Jin Hong

AU - Yu, Hyun Yong

N1 - Funding Information: This work was supported in part by the National Research Foundation of Korea within the Ministry of Science, ICT, and Future Planning through the Basic Science Research Program under Grant 2014R1A1A1036090 and in part by the Technology Innovation Program entitled Technology Development of Ge nMOS/pMOS FinFET for 10nm Technology Node within the Ministry of Trade, Industry & Energy, Korea, under Grant 10048594. The review of this letter was arranged by Editor K. J. Kuhn.

PY - 2016/6

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N2 - The effect of post-deposition H2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity ( ρc) of 3.4 × 10-4 Ω · cm2 was achieved on a moderately doped n-Ge substrate (1 × 1017 cm -3) , whereby 5900× reduction was exhibited from the Ti/n-Ge structure, and a 10× reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.

AB - The effect of post-deposition H2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity ( ρc) of 3.4 × 10-4 Ω · cm2 was achieved on a moderately doped n-Ge substrate (1 × 1017 cm -3) , whereby 5900× reduction was exhibited from the Ti/n-Ge structure, and a 10× reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.

KW - Contact resistance

KW - Fermi-level unpinning

KW - germanium

KW - post-deposition hydrogen annealing

KW - source/drain

KW - titanium dioxide

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