Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2

Jong Mun Choi, Dohan Lee, Ji Hun Park, Chang Gyoun Kim, Taek Mo Chung, Baek Mann Kim, Dong Jin Byun

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A high quality Cu seed layer was successfully prepared by chemical vapor deposition (CVD) from the newly synthesized Cu(dmamb)2 precursor. The growth behavior of Cu thin film was systematically investigated, with particular focus on the effect of growth temperature and atmosphere on the Cu seed layer properties. The grain size of the Cu thin film was enhanced by hydrogen atmosphere and the residual impurity in the Cu thin film was effectively reduced. The resistivity of the Cu thin film depended on the grain size and impurity concentration. A Cu seed layer was successfully obtained with resistivity of 37 μ Ω cm and thickness of 27 nm. These results demonstrated the possibility of fabricating a high quality Cu seed layer by CVD using the Cu(dmamb)2 precursor.

Original languageEnglish
Pages (from-to)109-115
Number of pages7
JournalMicroelectronic Engineering
Volume89
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Film growth
Seed
seeds
Hydrogen
Chemical vapor deposition
vapor deposition
atmospheres
Thin films
hydrogen
thin films
grain size
Impurities
impurities
electrical resistivity
Growth temperature
temperature

Keywords

  • Cu seed layer
  • Cu(II) precursor
  • CVD
  • Interconnect
  • Thin film growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2 . / Choi, Jong Mun; Lee, Dohan; Park, Ji Hun; Kim, Chang Gyoun; Chung, Taek Mo; Kim, Baek Mann; Byun, Dong Jin.

In: Microelectronic Engineering, Vol. 89, No. 1, 01.01.2012, p. 109-115.

Research output: Contribution to journalArticle

Choi, Jong Mun ; Lee, Dohan ; Park, Ji Hun ; Kim, Chang Gyoun ; Chung, Taek Mo ; Kim, Baek Mann ; Byun, Dong Jin. / Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2 In: Microelectronic Engineering. 2012 ; Vol. 89, No. 1. pp. 109-115.
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