Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2

Jong Mun Choi, Dohan Lee, Ji Hun Park, Chang Gyoun Kim, Taek Mo Chung, Baek Mann Kim, Dongjin Byun

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A high quality Cu seed layer was successfully prepared by chemical vapor deposition (CVD) from the newly synthesized Cu(dmamb)2 precursor. The growth behavior of Cu thin film was systematically investigated, with particular focus on the effect of growth temperature and atmosphere on the Cu seed layer properties. The grain size of the Cu thin film was enhanced by hydrogen atmosphere and the residual impurity in the Cu thin film was effectively reduced. The resistivity of the Cu thin film depended on the grain size and impurity concentration. A Cu seed layer was successfully obtained with resistivity of 37 μ Ω cm and thickness of 27 nm. These results demonstrated the possibility of fabricating a high quality Cu seed layer by CVD using the Cu(dmamb)2 precursor.

Original languageEnglish
Pages (from-to)109-115
Number of pages7
JournalMicroelectronic Engineering
Volume89
Issue number1
DOIs
Publication statusPublished - 2012 Jan

Keywords

  • CVD
  • Cu seed layer
  • Cu(II) precursor
  • Interconnect
  • Thin film growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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