Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films

Hyun Ju Choi, Heung Taek Bae, Michael J. McNallan, Yong Ho Sohn, Dae-Soon Lim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, the effect of hydrogen on the structure and mechanical properties of carbon films produced by selective etching of monolithic SiC was examined. The process to produce carbon films from SiC (i.e., SiC-derived carbon, CDC) was carried out in a gas mixture of Cl2 and H2 at 1000 °C for 20 h. The Raman intensity ratio, ID/IG, where subscripts D and G refer to diamond and graphite, decreased as the hydrogen concentration in the gas mixture increased, indicating a decrease in the sp2 carbon cluster. XRD analysis also showed that the fraction of graphitization decreased as the hydrogen concentration increased. The addition of hydrogen that prevented the formation of graphite (sp2 bonding) also resulted in a reduction in the film thickness. The hardness and elastic modulus of the carbon films tended to decrease as the H2 content increased owing to the contribution from the C-H bond and the nano-size pore.

Original languageEnglish
Pages (from-to)1018-1021
Number of pages4
JournalSurface and Coatings Technology
Volume204
Issue number6-7
DOIs
Publication statusPublished - 2009 Dec 25

Fingerprint

Carbon films
Silicon carbide
silicon carbides
Hydrogen
Physical properties
physical properties
mechanical properties
Mechanical properties
Graphite
carbon
hydrogen
Gas mixtures
gas mixtures
Carbon clusters
graphite
Graphitization
Diamond
graphitization
Pore size
Film thickness

Keywords

  • Chlorination
  • Graphitization
  • Nanoindentation
  • Plasticity
  • Silicon carbide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films. / Choi, Hyun Ju; Bae, Heung Taek; McNallan, Michael J.; Sohn, Yong Ho; Lim, Dae-Soon.

In: Surface and Coatings Technology, Vol. 204, No. 6-7, 25.12.2009, p. 1018-1021.

Research output: Contribution to journalArticle

Choi, Hyun Ju ; Bae, Heung Taek ; McNallan, Michael J. ; Sohn, Yong Ho ; Lim, Dae-Soon. / Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films. In: Surface and Coatings Technology. 2009 ; Vol. 204, No. 6-7. pp. 1018-1021.
@article{06d8b0c76c754c25af77b2d2843cc066,
title = "Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films",
abstract = "In this study, the effect of hydrogen on the structure and mechanical properties of carbon films produced by selective etching of monolithic SiC was examined. The process to produce carbon films from SiC (i.e., SiC-derived carbon, CDC) was carried out in a gas mixture of Cl2 and H2 at 1000 °C for 20 h. The Raman intensity ratio, ID/IG, where subscripts D and G refer to diamond and graphite, decreased as the hydrogen concentration in the gas mixture increased, indicating a decrease in the sp2 carbon cluster. XRD analysis also showed that the fraction of graphitization decreased as the hydrogen concentration increased. The addition of hydrogen that prevented the formation of graphite (sp2 bonding) also resulted in a reduction in the film thickness. The hardness and elastic modulus of the carbon films tended to decrease as the H2 content increased owing to the contribution from the C-H bond and the nano-size pore.",
keywords = "Chlorination, Graphitization, Nanoindentation, Plasticity, Silicon carbide",
author = "Choi, {Hyun Ju} and Bae, {Heung Taek} and McNallan, {Michael J.} and Sohn, {Yong Ho} and Dae-Soon Lim",
year = "2009",
month = "12",
day = "25",
doi = "10.1016/j.surfcoat.2009.05.023",
language = "English",
volume = "204",
pages = "1018--1021",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "6-7",

}

TY - JOUR

T1 - Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films

AU - Choi, Hyun Ju

AU - Bae, Heung Taek

AU - McNallan, Michael J.

AU - Sohn, Yong Ho

AU - Lim, Dae-Soon

PY - 2009/12/25

Y1 - 2009/12/25

N2 - In this study, the effect of hydrogen on the structure and mechanical properties of carbon films produced by selective etching of monolithic SiC was examined. The process to produce carbon films from SiC (i.e., SiC-derived carbon, CDC) was carried out in a gas mixture of Cl2 and H2 at 1000 °C for 20 h. The Raman intensity ratio, ID/IG, where subscripts D and G refer to diamond and graphite, decreased as the hydrogen concentration in the gas mixture increased, indicating a decrease in the sp2 carbon cluster. XRD analysis also showed that the fraction of graphitization decreased as the hydrogen concentration increased. The addition of hydrogen that prevented the formation of graphite (sp2 bonding) also resulted in a reduction in the film thickness. The hardness and elastic modulus of the carbon films tended to decrease as the H2 content increased owing to the contribution from the C-H bond and the nano-size pore.

AB - In this study, the effect of hydrogen on the structure and mechanical properties of carbon films produced by selective etching of monolithic SiC was examined. The process to produce carbon films from SiC (i.e., SiC-derived carbon, CDC) was carried out in a gas mixture of Cl2 and H2 at 1000 °C for 20 h. The Raman intensity ratio, ID/IG, where subscripts D and G refer to diamond and graphite, decreased as the hydrogen concentration in the gas mixture increased, indicating a decrease in the sp2 carbon cluster. XRD analysis also showed that the fraction of graphitization decreased as the hydrogen concentration increased. The addition of hydrogen that prevented the formation of graphite (sp2 bonding) also resulted in a reduction in the film thickness. The hardness and elastic modulus of the carbon films tended to decrease as the H2 content increased owing to the contribution from the C-H bond and the nano-size pore.

KW - Chlorination

KW - Graphitization

KW - Nanoindentation

KW - Plasticity

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=71849102931&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71849102931&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2009.05.023

DO - 10.1016/j.surfcoat.2009.05.023

M3 - Article

AN - SCOPUS:71849102931

VL - 204

SP - 1018

EP - 1021

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 6-7

ER -