Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

Chang Hee Cho, Baek Hyun Kim, Tae Wook Kim, Seong Ju Park, Nae Man Park, Gun Yong Sung

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by Si H4 + N2 and Si H4 +N H3 plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by Si H4 +N H3 plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by Si H4 + N2 plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of Si H4 +N H3 plasma, due to the hydrogen passivation of the defects in the silicon nitride films by N H3 during the growth of the Si QDs.

Original languageEnglish
Article number143107
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number14
DOIs
Publication statusPublished - 2005 Apr 4
Externally publishedYes

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silicon nitrides
passivity
quantum dots
silicon
hydrogen
silicon films
electrical measurement
electron microscopes
capacitance
traps
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film. / Cho, Chang Hee; Kim, Baek Hyun; Kim, Tae Wook; Park, Seong Ju; Park, Nae Man; Sung, Gun Yong.

In: Applied Physics Letters, Vol. 86, No. 14, 143107, 04.04.2005, p. 1-3.

Research output: Contribution to journalArticle

Cho, Chang Hee ; Kim, Baek Hyun ; Kim, Tae Wook ; Park, Seong Ju ; Park, Nae Man ; Sung, Gun Yong. / Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film. In: Applied Physics Letters. 2005 ; Vol. 86, No. 14. pp. 1-3.
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