Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO

Sang Ho Kim, Han Ki Kim, Tae Yeon Seong

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140 Citations (Scopus)

Abstract

We report on the formation of good Pt Schottky contacts on the Zn-terminated n-type ZnO (0001) surfaces (∼2×1017 cm -3) using surface treatment with a hydrogen peroxide solution. The Pt contacts on organic solvent-cleaned ZnO (0001) show leaky behavior with a high leakage current of ∼-0.05 A under -5 V reverse bias voltage, whereas the hydrogen peroxide-treated contacts show Schottky behavior with very low leakage current of ∼-6.5×10-8 A under -5 V reverse bias voltage. Schottky barrier heights estimated from current-voltage and capacitance-voltage characteristics are 0.89 and 0.93 eV, respectively. Room-temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region. In addition, the preliminary deep-level transient spectroscopy result is also presented.

Original languageEnglish
Article number112101
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number11
DOIs
Publication statusPublished - 2005 Mar 14

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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