We report on the formation of good Pt Schottky contacts on the Zn-terminated n-type ZnO (0001) surfaces (∼2×1017 cm -3) using surface treatment with a hydrogen peroxide solution. The Pt contacts on organic solvent-cleaned ZnO (0001) show leaky behavior with a high leakage current of ∼-0.05 A under -5 V reverse bias voltage, whereas the hydrogen peroxide-treated contacts show Schottky behavior with very low leakage current of ∼-6.5×10-8 A under -5 V reverse bias voltage. Schottky barrier heights estimated from current-voltage and capacitance-voltage characteristics are 0.89 and 0.93 eV, respectively. Room-temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region. In addition, the preliminary deep-level transient spectroscopy result is also presented.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)