Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes

Kyeong Heon Kim, Su Jin Kim, Sang Young Park, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O3 bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples - an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture - were prepared and annealed at different temperatures ranging from 100°C to 500°C for comparison. Among these samples, the sample annealed at 300°C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/□ and a high UV transmittance of 87.1% at 300 nm.

Original languageEnglish
Pages (from-to)7777-7780
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number10
DOIs
Publication statusPublished - 2015 Oct 1

Fingerprint

Ultraviolet Rays
ITO (semiconductors)
ultraviolet radiation
Light emitting diodes
Hydrogen
light emitting diodes
Gases
Annealing
annealing
Sheet resistance
hydrogen
Gas mixtures
Magnetron sputtering
Electric properties
Optical properties
Electrodes
Temperature
gases
gas mixtures
transmittance

Keywords

  • Bi-layer
  • Deep-UV
  • GaO
  • ITO
  • Transparent conducting electrode

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes. / Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun.

In: Journal of Nanoscience and Nanotechnology, Vol. 15, No. 10, 01.10.2015, p. 7777-7780.

Research output: Contribution to journalArticle

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