Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes

Kyeong Heon Kim, Su Jin Kim, Sang Young Park, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O3 bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples - an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture - were prepared and annealed at different temperatures ranging from 100°C to 500°C for comparison. Among these samples, the sample annealed at 300°C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/□ and a high UV transmittance of 87.1% at 300 nm.

Original languageEnglish
Pages (from-to)7777-7780
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number10
DOIs
Publication statusPublished - 2015 Oct 1

Keywords

  • Bi-layer
  • Deep-UV
  • GaO
  • ITO
  • Transparent conducting electrode

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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