Effect of indium contents on the solution-processed SiInZnO thin film transistors annealed at low temperature

Ki Ho Park, Eugene Chong, Byeong Kwon Ju, Sang Yeol Lee

Research output: Contribution to journalArticle

Abstract

The effect of the indium contents (from 1 to 5 molar ratios of In) on the threshold voltage (V th) and field effect mobilities ( FE) of solution processed silicon-indium-zinc-oxide (SIZO) thin film transistors (TFTs) have been reported. The negative shift of V th was occurred from 4.37 to -0.75 V and the FE was increased clearly by mainly exceeded In contents due to the increase of carrier concentration, which is related the increased of the number of free electrons associated with excess In incorpoation in the SIZO TFTs. As increasing the In content, the excess In affects films formation of SIZO and leads to decrease of surface roughness. Subthreshold swing (S.S) was decreased due to reduced trap density at the interfaces between the active channel layer and the insulator with decreasing surface roughness of the SIZO films. This proposed that the characteristics of SIZO TFTs can be improved by controlling the In molar ratio in the SIZO based TFTs.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number12
DOIs
Publication statusPublished - 2011 Nov 1

Fingerprint

Indium
Zinc Oxide
Thin film transistors
zinc oxides
indium oxides
Silicon
indium
Zinc oxide
transistors
silicon
Oxide films
thin films
Temperature
surface roughness
Surface roughness
threshold voltage
free electrons
oxide films
Threshold voltage
Carrier concentration

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Effect of indium contents on the solution-processed SiInZnO thin film transistors annealed at low temperature. / Park, Ki Ho; Chong, Eugene; Ju, Byeong Kwon; Lee, Sang Yeol.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 12, 01.11.2011.

Research output: Contribution to journalArticle

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