Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD

Chan Hwa Hong; Jae Heon Shin; Nae Man Park; Kyung Hyun Kim; Bo Sul Kim; Chang Woo Song; Ji Woong Yang; Woo Hyung Seo; Byeong Kwon Ju; Woo Seok Cheong

doi:10.1166/jnn.2015.11289

Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD

Chan Hwa Hong, Jae Heon Shin, Nae Man Park, Kyung Hyun Kim, Bo Sul Kim, Chang Woo Song, Ji Woong Yang, Woo Hyung Seo, Byeong Kwon Ju, Woo Seok Cheong

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

Original language	English
Pages (from-to)	8099-8102
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	15
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2015.11289
Publication status	Published - 2015 Oct

Keywords

ICP
IPVD
TCO
Ti-doped ITO

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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10.1166/jnn.2015.11289

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title = "Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD",

abstract = "In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.",

keywords = "ICP, IPVD, TCO, Ti-doped ITO",

author = "Hong, {Chan Hwa} and Shin, {Jae Heon} and Park, {Nae Man} and Kim, {Kyung Hyun} and Kim, {Bo Sul} and Song, {Chang Woo} and Yang, {Ji Woong} and Seo, {Woo Hyung} and Ju, {Byeong Kwon} and Cheong, {Woo Seok}",

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month = oct,

doi = "10.1166/jnn.2015.11289",

language = "English",

volume = "15",

pages = "8099--8102",

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T1 - Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD

AU - Hong, Chan Hwa

AU - Shin, Jae Heon

AU - Park, Nae Man

AU - Kim, Kyung Hyun

AU - Kim, Bo Sul

AU - Song, Chang Woo

AU - Yang, Ji Woong

AU - Seo, Woo Hyung

AU - Ju, Byeong Kwon

AU - Cheong, Woo Seok

PY - 2015/10

Y1 - 2015/10

N2 - In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

AB - In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

KW - ICP

KW - IPVD

KW - TCO

KW - Ti-doped ITO

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DO - 10.1166/jnn.2015.11289

M3 - Article

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VL - 15

SP - 8099

EP - 8102

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

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ER -

Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD

Abstract

Keywords

ASJC Scopus subject areas

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