Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD

Chan Hwa Hong, Jae Heon Shin, Nae Man Park, Kyung Hyun Kim, Bo Sul Kim, Chang Woo Song, Ji Woong Yang, Woo Hyung Seo, Byeong Kwon Ju, Woo Seok Cheong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

Original languageEnglish
Pages (from-to)8099-8102
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number10
DOIs
Publication statusPublished - 2015 Oct 1

Fingerprint

Physical vapor deposition
Inductively coupled plasma
ITO (semiconductors)
Structural properties
Electric properties
electrical properties
vapor deposition
Touch screens
Sheet resistance
Electrodes
Technology
Thin films
Temperature
crystallinity
electrodes
room temperature
thin films

Keywords

  • ICP
  • IPVD
  • TCO
  • Ti-doped ITO

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD. / Hong, Chan Hwa; Shin, Jae Heon; Park, Nae Man; Kim, Kyung Hyun; Kim, Bo Sul; Song, Chang Woo; Yang, Ji Woong; Seo, Woo Hyung; Ju, Byeong Kwon; Cheong, Woo Seok.

In: Journal of Nanoscience and Nanotechnology, Vol. 15, No. 10, 01.10.2015, p. 8099-8102.

Research output: Contribution to journalArticle

Hong, Chan Hwa ; Shin, Jae Heon ; Park, Nae Man ; Kim, Kyung Hyun ; Kim, Bo Sul ; Song, Chang Woo ; Yang, Ji Woong ; Seo, Woo Hyung ; Ju, Byeong Kwon ; Cheong, Woo Seok. / Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD. In: Journal of Nanoscience and Nanotechnology. 2015 ; Vol. 15, No. 10. pp. 8099-8102.
@article{934c5a96bac74341a5eccb7ae73c6ad5,
title = "Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD",
abstract = "In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.",
keywords = "ICP, IPVD, TCO, Ti-doped ITO",
author = "Hong, {Chan Hwa} and Shin, {Jae Heon} and Park, {Nae Man} and Kim, {Kyung Hyun} and Kim, {Bo Sul} and Song, {Chang Woo} and Yang, {Ji Woong} and Seo, {Woo Hyung} and Ju, {Byeong Kwon} and Cheong, {Woo Seok}",
year = "2015",
month = "10",
day = "1",
doi = "10.1166/jnn.2015.11289",
language = "English",
volume = "15",
pages = "8099--8102",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "10",

}

TY - JOUR

T1 - Effect of inductively coupled plasma on the structural and electrical properties of Ti-doped ITO films formed by IPVD

AU - Hong, Chan Hwa

AU - Shin, Jae Heon

AU - Park, Nae Man

AU - Kim, Kyung Hyun

AU - Kim, Bo Sul

AU - Song, Chang Woo

AU - Yang, Ji Woong

AU - Seo, Woo Hyung

AU - Ju, Byeong Kwon

AU - Cheong, Woo Seok

PY - 2015/10/1

Y1 - 2015/10/1

N2 - In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

AB - In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

KW - ICP

KW - IPVD

KW - TCO

KW - Ti-doped ITO

UR - http://www.scopus.com/inward/record.url?scp=84947248278&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947248278&partnerID=8YFLogxK

U2 - 10.1166/jnn.2015.11289

DO - 10.1166/jnn.2015.11289

M3 - Article

AN - SCOPUS:84947248278

VL - 15

SP - 8099

EP - 8102

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 10

ER -