Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes

Baek Hyun Kim, Robert F. Davis, Chang Hee Cho, Seong Ju Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the effect of injection current density on the electroluminescence (EL) from silicon quantum dot (QD) light-emitting diodes. The EL spectra as a function of injection current density were blueshifted and broad. These results are attributed to both the increase in the contribution of small Si QDs in the silicon nitride film due to the increase in the injection current density and the recombination of electron-hole pairs between excited states in the Si QDs due to band bending under high bias.

Original languageEnglish
Article number153103
JournalApplied Physics Letters
Volume95
Issue number15
DOIs
Publication statusPublished - 2009 Oct 22
Externally publishedYes

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electroluminescence
light emitting diodes
quantum dots
injection
current density
silicon
silicon nitrides
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes. / Kim, Baek Hyun; Davis, Robert F.; Cho, Chang Hee; Park, Seong Ju.

In: Applied Physics Letters, Vol. 95, No. 15, 153103, 22.10.2009.

Research output: Contribution to journalArticle

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