Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction

J. Y. Hwang, S. Y. Lee, N. I. Lee, H. I. Yim, M. Y. Kim, W. C. Lee, J. R. Rhee, B. S. Chun, T. W. Kim, Y. K. Kim, S. S. Lee, D. G. Hwang, E. J. Ri

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2 Citations (Scopus)

Abstract

The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si 15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/A10x/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.

Original languageEnglish
Article number4957738
Pages (from-to)2396-2398
Number of pages3
JournalIEEE Transactions on Magnetics
Volume45
Issue number6
DOIs
Publication statusPublished - 2009 Jun

Keywords

  • Amorphous ferromagnetic
  • Bias voltage dependence
  • CoFeSiB
  • Magnetic tunnel junction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Hwang, J. Y., Lee, S. Y., Lee, N. I., Yim, H. I., Kim, M. Y., Lee, W. C., Rhee, J. R., Chun, B. S., Kim, T. W., Kim, Y. K., Lee, S. S., Hwang, D. G., & Ri, E. J. (2009). Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction. IEEE Transactions on Magnetics, 45(6), 2396-2398. [4957738]. https://doi.org/10.1109/TMAG.2009.2018586