Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction

J. Y. Hwang, S. Y. Lee, N. I. Lee, H. I. Yim, M. Y. Kim, W. C. Lee, J. R. Rhee, B. S. Chun, T. W. Kim, Young-geun Kim, S. S. Lee, D. G. Hwang, E. J. Ri

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si 15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/A10x/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.

Original languageEnglish
Article number4957738
Pages (from-to)2396-2398
Number of pages3
JournalIEEE Transactions on Magnetics
Volume45
Issue number6
DOIs
Publication statusPublished - 2009 Jun 1

Fingerprint

Tunnel junctions
Magnetoresistance
Tunnelling magnetoresistance
Magnetization
Surface roughness
Bias voltage
Tunnels
Transmission electron microscopy
X rays
Electric potential

Keywords

  • Amorphous ferromagnetic
  • Bias voltage dependence
  • CoFeSiB
  • Magnetic tunnel junction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hwang, J. Y., Lee, S. Y., Lee, N. I., Yim, H. I., Kim, M. Y., Lee, W. C., ... Ri, E. J. (2009). Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction. IEEE Transactions on Magnetics, 45(6), 2396-2398. [4957738]. https://doi.org/10.1109/TMAG.2009.2018586

Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction. / Hwang, J. Y.; Lee, S. Y.; Lee, N. I.; Yim, H. I.; Kim, M. Y.; Lee, W. C.; Rhee, J. R.; Chun, B. S.; Kim, T. W.; Kim, Young-geun; Lee, S. S.; Hwang, D. G.; Ri, E. J.

In: IEEE Transactions on Magnetics, Vol. 45, No. 6, 4957738, 01.06.2009, p. 2396-2398.

Research output: Contribution to journalArticle

Hwang, JY, Lee, SY, Lee, NI, Yim, HI, Kim, MY, Lee, WC, Rhee, JR, Chun, BS, Kim, TW, Kim, Y, Lee, SS, Hwang, DG & Ri, EJ 2009, 'Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction', IEEE Transactions on Magnetics, vol. 45, no. 6, 4957738, pp. 2396-2398. https://doi.org/10.1109/TMAG.2009.2018586
Hwang, J. Y. ; Lee, S. Y. ; Lee, N. I. ; Yim, H. I. ; Kim, M. Y. ; Lee, W. C. ; Rhee, J. R. ; Chun, B. S. ; Kim, T. W. ; Kim, Young-geun ; Lee, S. S. ; Hwang, D. G. ; Ri, E. J. / Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction. In: IEEE Transactions on Magnetics. 2009 ; Vol. 45, No. 6. pp. 2396-2398.
@article{3b7620f06ede4424a8a808982d6035f5,
title = "Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction",
abstract = "The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si 15B10 (in at. {\%}) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/A10x/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.",
keywords = "Amorphous ferromagnetic, Bias voltage dependence, CoFeSiB, Magnetic tunnel junction",
author = "Hwang, {J. Y.} and Lee, {S. Y.} and Lee, {N. I.} and Yim, {H. I.} and Kim, {M. Y.} and Lee, {W. C.} and Rhee, {J. R.} and Chun, {B. S.} and Kim, {T. W.} and Young-geun Kim and Lee, {S. S.} and Hwang, {D. G.} and Ri, {E. J.}",
year = "2009",
month = "6",
day = "1",
doi = "10.1109/TMAG.2009.2018586",
language = "English",
volume = "45",
pages = "2396--2398",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction

AU - Hwang, J. Y.

AU - Lee, S. Y.

AU - Lee, N. I.

AU - Yim, H. I.

AU - Kim, M. Y.

AU - Lee, W. C.

AU - Rhee, J. R.

AU - Chun, B. S.

AU - Kim, T. W.

AU - Kim, Young-geun

AU - Lee, S. S.

AU - Hwang, D. G.

AU - Ri, E. J.

PY - 2009/6/1

Y1 - 2009/6/1

N2 - The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si 15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/A10x/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.

AB - The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si 15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/A10x/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.

KW - Amorphous ferromagnetic

KW - Bias voltage dependence

KW - CoFeSiB

KW - Magnetic tunnel junction

UR - http://www.scopus.com/inward/record.url?scp=66549089940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66549089940&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2009.2018586

DO - 10.1109/TMAG.2009.2018586

M3 - Article

AN - SCOPUS:66549089940

VL - 45

SP - 2396

EP - 2398

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 6

M1 - 4957738

ER -