Effect of interlayer exchange coupling on the curie temperature in Ga 1-xMnxAs trilayer structures

Shavkat U. Yuldashev, Yongmin Kim, Nayoung Kim, H. Im, Tae Won Kang, Sanghoon Lee, Yuji Sasaki, Xin Liu, Jacek K. Furdyna

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Gai1-xMn xAs(Be)/GaAs/Ga1-xMnxAs trilayer structures. The FM layers in the trilayers contained the same concentration of Mn (x ≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga0.954Mn0.046 As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Gao0.954Mn0.046AS(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.

Original languageEnglish
Pages (from-to)2093-2096
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - 2004 Apr

Keywords

  • Exchange coupling
  • Magnetic semiconductors
  • Magnetjc trilayer structures

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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