Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells

L. M. Sparing, A. M. Mintairov, J. H. Hodak, I. B. Martini, G. V. Hartland, U. Bindley, S. Lee, J. K. Furdyna, J. L. Merz, G. L. Snider

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Abstract

Studies of the effects of reactive ion etching on molecular beam epitaxy grown CdxZn1-xSe/ZnSe strained quantum wells (QWs) using photoluminescence (PL) and time-resolved reflectivity measurements are reported. The shallow (50 nm cap layer) QW samples exhibit a blueshift in their PL peak position as a function of etch voltage up to a certain point, after which the blueshift is reduced. The reduction in the blueshift of the PL spectrum is strongly correlated with a reduction in the carrier lifetimes measured by transient reflectivity. From these experiments we suggest that the initial blueshift is a result of ion damage at the surface interacting with strain in the QW. On the other hand, the reduced carrier lifetime at higher voltages is a result of more severe structural damage in the QW.

Original languageEnglish
Pages (from-to)3063-3067
Number of pages5
JournalJournal of Applied Physics
Volume87
Issue number6
DOIs
Publication statusPublished - 2000 Mar 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Sparing, L. M., Mintairov, A. M., Hodak, J. H., Martini, I. B., Hartland, G. V., Bindley, U., Lee, S., Furdyna, J. K., Merz, J. L., & Snider, G. L. (2000). Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells. Journal of Applied Physics, 87(6), 3063-3067. https://doi.org/10.1063/1.372300