TY - JOUR
T1 - Effect of laser beam energy density on the structural and electrical properties of TiO2-doped Bi5Nb3O15 thin film grown by pulsed laser deposition
AU - Sun, Jong Woo
AU - Kang, Lee Seung
AU - Kim, Jin Seong
AU - Paik, Dong Soo
AU - Nahm, Sahn
AU - Seong, Tae Geun
AU - Kang, Chong Yun
AU - Kim, Jong Hee
PY - 2010/8/4
Y1 - 2010/8/4
N2 - With the addition of TiO2, the dielectric constant (εr) of a Bi5Nb3O15(B5N3) film was slightly increased and the leakage current decreased, probably due to the increased dipole moment and the decreased number of free electrons in the film, respectively. The energy density of the laser beam considerably influenced the structure and electrical properties of the 1.0mol% TiO2-doped B 5N3 (TBN) films. At low beam energy densities (≤2.0 J cm-2), Bi3NbO7 and Bi8Nb 18O57 phases with a porous microstructure were formed and a poor interface was also formed between the film and the electrode. However, for the TBN film grown at 200 °C at a high beam energy density of 4.0 J cm-2, a dense Bi3NbO7 phase was formed with a sharp interface. The εr value of this TBN film was very high, approximately 115, with a low leakage current density of 1.4 × 10 -8 A cm-2 at 0.5MVcm-1 and a high breakdown field of 0.55 MVcm-1. This improvement in the εr value and the electrical properties was explained by the formation of a dense Bi3NbO7 phase with a (1 1 1) preferred orientation, Ti doping and a sharp interface, indicating that the TBN film is a good candidate material for embedded capacitors.
AB - With the addition of TiO2, the dielectric constant (εr) of a Bi5Nb3O15(B5N3) film was slightly increased and the leakage current decreased, probably due to the increased dipole moment and the decreased number of free electrons in the film, respectively. The energy density of the laser beam considerably influenced the structure and electrical properties of the 1.0mol% TiO2-doped B 5N3 (TBN) films. At low beam energy densities (≤2.0 J cm-2), Bi3NbO7 and Bi8Nb 18O57 phases with a porous microstructure were formed and a poor interface was also formed between the film and the electrode. However, for the TBN film grown at 200 °C at a high beam energy density of 4.0 J cm-2, a dense Bi3NbO7 phase was formed with a sharp interface. The εr value of this TBN film was very high, approximately 115, with a low leakage current density of 1.4 × 10 -8 A cm-2 at 0.5MVcm-1 and a high breakdown field of 0.55 MVcm-1. This improvement in the εr value and the electrical properties was explained by the formation of a dense Bi3NbO7 phase with a (1 1 1) preferred orientation, Ti doping and a sharp interface, indicating that the TBN film is a good candidate material for embedded capacitors.
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U2 - 10.1088/0022-3727/43/30/305404
DO - 10.1088/0022-3727/43/30/305404
M3 - Article
AN - SCOPUS:77956903128
VL - 43
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 30
M1 - 305404
ER -