Effect of low temperature annealing on the magnetic properties of Ga 1-xMnxAs/GaAs superlattices

S. J. Chung, Sang Hoon Lee, I. W. Park, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

Original languageEnglish
Pages (from-to)93-96
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume18
Issue number1
DOIs
Publication statusPublished - 2005 Dec 1

Fingerprint

Superlattices
superlattices
Magnetic properties
Annealing
magnetic properties
annealing
Temperature
gallium arsenide
Magnetization
Doping (additives)
magnetization
temperature dependence
sensitivity

Keywords

  • Ferromagnetic Semiconductor
  • GaMnAs
  • Magnetization
  • Superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

Cite this

Effect of low temperature annealing on the magnetic properties of Ga 1-xMnxAs/GaAs superlattices. / Chung, S. J.; Lee, Sang Hoon; Park, I. W.; Liu, X.; Furdyna, J. K.

In: Journal of Superconductivity and Novel Magnetism, Vol. 18, No. 1, 01.12.2005, p. 93-96.

Research output: Contribution to journalArticle

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AU - Lee, Sang Hoon

AU - Park, I. W.

AU - Liu, X.

AU - Furdyna, J. K.

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N2 - We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

AB - We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

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