Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers

Woojin Kim, Kyoung Jin Lee, Taek Dong Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (Ms) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing Ms of PELs and decreasing interlayer exchange coupling.

Original languageEnglish
Pages (from-to)104-107
Number of pages4
JournalJournal of Magnetics
Volume14
Issue number3
DOIs
Publication statusPublished - 2009 Oct 20

Fingerprint

Induced currents
Magnetization
Magnetic properties
Polarization
magnetic properties
magnetization
Exchange coupling
augmentation
polarization
Current density
Tunnel junctions
Saturation magnetization
interlayers
current density
low currents
tunnel junctions
saturation
estimates

Keywords

  • Current-induced magnetization switching
  • Magnetic random access memory
  • Micromagnetics
  • Perpendicular magnetic anisotropy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers. / Kim, Woojin; Lee, Kyoung Jin; Lee, Taek Dong.

In: Journal of Magnetics, Vol. 14, No. 3, 20.10.2009, p. 104-107.

Research output: Contribution to journalArticle

@article{335b28112acc498faa9b44c9f2980536,
title = "Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers",
abstract = "The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (Ms) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing Ms of PELs and decreasing interlayer exchange coupling.",
keywords = "Current-induced magnetization switching, Magnetic random access memory, Micromagnetics, Perpendicular magnetic anisotropy",
author = "Woojin Kim and Lee, {Kyoung Jin} and Lee, {Taek Dong}",
year = "2009",
month = "10",
day = "20",
doi = "10.4283/JMAG.2009.14.3.104",
language = "English",
volume = "14",
pages = "104--107",
journal = "Journal of Magnetics",
issn = "1226-1750",
publisher = "The Korean Magnestics Society",
number = "3",

}

TY - JOUR

T1 - Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers

AU - Kim, Woojin

AU - Lee, Kyoung Jin

AU - Lee, Taek Dong

PY - 2009/10/20

Y1 - 2009/10/20

N2 - The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (Ms) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing Ms of PELs and decreasing interlayer exchange coupling.

AB - The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (Ms) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing Ms of PELs and decreasing interlayer exchange coupling.

KW - Current-induced magnetization switching

KW - Magnetic random access memory

KW - Micromagnetics

KW - Perpendicular magnetic anisotropy

UR - http://www.scopus.com/inward/record.url?scp=70349981944&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349981944&partnerID=8YFLogxK

U2 - 10.4283/JMAG.2009.14.3.104

DO - 10.4283/JMAG.2009.14.3.104

M3 - Article

VL - 14

SP - 104

EP - 107

JO - Journal of Magnetics

JF - Journal of Magnetics

SN - 1226-1750

IS - 3

ER -