Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers

Woojin Kim, Kyung Jin Lee, Taek Dong Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (Ms) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing Ms of PELs and decreasing interlayer exchange coupling.

Original languageEnglish
Pages (from-to)104-107
Number of pages4
JournalJournal of Magnetics
Volume14
Issue number3
DOIs
Publication statusPublished - 2009 Oct 20

Keywords

  • Current-induced magnetization switching
  • Magnetic random access memory
  • Micromagnetics
  • Perpendicular magnetic anisotropy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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