Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Juhan Ahn, Jeong Kyu Kim, Sun Woo Kim, Gwang Sik Kim, Changhwan Shin, Jong-Kook Kim, Byung Jin Cho, Hyun-Yong Yu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρc) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n+-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n+-IL generate much lower ρc values (i.e., ~2 × 10-9 ω · cm2) and are less prone to variation. In addition, the impact of ρc variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n+-IL can achieve much lower current variation and a higher ON-state drive current.

Original languageEnglish
Article number7451242
Pages (from-to)705-708
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number6
DOIs
Publication statusPublished - 2016 Jun 1

Keywords

  • CMOS
  • FinFET
  • germanium
  • interlayer
  • specific contact resistivity
  • tantalum nitride
  • variation
  • workfunction
  • zinc oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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