Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors

Sang Il Shin, Jae Hong Kwon, Jung Hoon Seo, Byeong Kwon Ju

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the fabrication of pentacene thin-film transistors (TFTs) utilizing a spun methyl siloxane-based spin-on-glass (SOG) dielectric and show that these devices can give a similar electrical performance as achieved by using pentacene TFTs with a silicon dioxide (SiO 2 ) dielectric. To improve the electrical performance of pentacene TFTs with the SOG dielectric, we employed a hybrid dielectric of an SOG/cross-linked poly-4-vinylphenol (PVP) polymer. The PVP film was deposited onto the spun SOG dielectric prior to pentacene evaporation, resulting in an improvement of the saturation field effect mobility (μ sat ) from 0.01 cm 2 /(V s) to 0.76 cm 2 /(V s). The good surface morphology and the matching surface energy of the SOG dielectric that was modified with the polymer thin film allow the optimized growth of crystalline pentacene domains whose nuclei are embedded in an amorphous phase.

Original languageEnglish
Pages (from-to)6987-6990
Number of pages4
JournalApplied Surface Science
Volume254
Issue number21
DOIs
Publication statusPublished - 2008 Aug 30

Keywords

  • Organic thin film transistor
  • Pentacene
  • Polymer film
  • Solution processed

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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