Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel

Jae Hoon Jung; Byeong Kwon Ju; Hoon Kim; Myung Hwan Oh; Suk Jae Chung; Jin Jang

doi:10.1116/1.589886

Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel

Jae Hoon Jung, Byeong Kwon Ju, Hoon Kim, Myung Hwan Oh, Suk Jae Chung, Jin Jang

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have studied the enhancement of field-emission characteristics by hydrogen-free nitrogen-doped diamondlike carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma-enhanced chemical vapor deposition. The Spindt-type molybdenum tip is used as an emission source without a resistive layer on the silicon substrate. The maximum emission current for each pixel was increased from 160 to 1520 μA by a 20 nm N-doped DLC coating. Furthermore, the emission current from DLC-coated field emitter arrays (FEAs) is more stable than that of noncoated FEAs.

Original language	English
Pages (from-to)	705-709
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	2
DOIs	https://doi.org/10.1116/1.589886
Publication status	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel",

abstract = "We have studied the enhancement of field-emission characteristics by hydrogen-free nitrogen-doped diamondlike carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma-enhanced chemical vapor deposition. The Spindt-type molybdenum tip is used as an emission source without a resistive layer on the silicon substrate. The maximum emission current for each pixel was increased from 160 to 1520 μA by a 20 nm N-doped DLC coating. Furthermore, the emission current from DLC-coated field emitter arrays (FEAs) is more stable than that of noncoated FEAs.",

author = "Jung, {Jae Hoon} and Ju, {Byeong Kwon} and Hoon Kim and Oh, {Myung Hwan} and Chung, {Suk Jae} and Jin Jang",

year = "1998",

doi = "10.1116/1.589886",

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T1 - Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel

AU - Jung, Jae Hoon

AU - Ju, Byeong Kwon

AU - Kim, Hoon

AU - Oh, Myung Hwan

AU - Chung, Suk Jae

AU - Jang, Jin

PY - 1998

Y1 - 1998

N2 - We have studied the enhancement of field-emission characteristics by hydrogen-free nitrogen-doped diamondlike carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma-enhanced chemical vapor deposition. The Spindt-type molybdenum tip is used as an emission source without a resistive layer on the silicon substrate. The maximum emission current for each pixel was increased from 160 to 1520 μA by a 20 nm N-doped DLC coating. Furthermore, the emission current from DLC-coated field emitter arrays (FEAs) is more stable than that of noncoated FEAs.

AB - We have studied the enhancement of field-emission characteristics by hydrogen-free nitrogen-doped diamondlike carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma-enhanced chemical vapor deposition. The Spindt-type molybdenum tip is used as an emission source without a resistive layer on the silicon substrate. The maximum emission current for each pixel was increased from 160 to 1520 μA by a 20 nm N-doped DLC coating. Furthermore, the emission current from DLC-coated field emitter arrays (FEAs) is more stable than that of noncoated FEAs.

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Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel

Abstract

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