Abstract
We have studied the enhancement of field-emission characteristics by hydrogen-free nitrogen-doped diamondlike carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma-enhanced chemical vapor deposition. The Spindt-type molybdenum tip is used as an emission source without a resistive layer on the silicon substrate. The maximum emission current for each pixel was increased from 160 to 1520 μA by a 20 nm N-doped DLC coating. Furthermore, the emission current from DLC-coated field emitter arrays (FEAs) is more stable than that of noncoated FEAs.
| Original language | English |
|---|---|
| Pages (from-to) | 705-709 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 16 |
| Issue number | 2 |
| Publication status | Published - 1998 Mar 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Surfaces and Interfaces
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Jung, J. H., Ju, B. K., Kim, H., Oh, M. H., Chung, S. J., & Jang, J. (1998). Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(2), 705-709.